Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing

Hyun Yong Yu, Jin Hong Park, Ali K. Okyay, Krishna C. Saraswat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers can be selectively integrated on Si CMOS platform with this technique. We confirm the reduction of dislocation density in Ge layers using AFM surface morphology study. In addition, in situ doping of Ge layers is achieved and MOS capacitor structures are studied.

Original languageEnglish
Title of host publicationECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publicationMaterials, Processing, and Devices
Pages823-828
Number of pages6
Edition10
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Publication series

NameECS Transactions
Number10
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • Engineering(all)

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    Yu, H. Y., Park, J. H., Okyay, A. K., & Saraswat, K. C. (2008). Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices (10 ed., pp. 823-828). (ECS Transactions; Vol. 16, No. 10). https://doi.org/10.1149/1.2986841