Defects in electron and neutron irradiated n-GaN: Disordered regions versus point defects

Alexander Y. Polyakov, Nikolai B. Smirnov, Anatoliy V. Govorkov, Alexander V. Markov, Cheul Ro Lee, In-Hwan Lee, Nikolai G. Kolin, Denis I. Merkurisov, Vladimir M. Boiko, James S. Wright, Stephen J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Effects of 10 MeV electron and fast reactor neutron irradiations on carrier removal rate and deep traps spectra were compared for undoped n-GaN samples. It is shown that for electron irradiation the carrier removal rate is well accounted for by the difference in introduction rates of nitrogen-vacancy- related donors with activation energy 0.2 eV and of nitrogen-interstitial- related acceptors at E c -1.2 eV. In the case of neutron irradiation the introduction rate of all deep traps was much lower than the carrier removal rate indicating that the main contribution to electron removal was due to disordered regions. These regions give rise to a marked persistent photocapacitance signal and a hole-trap-like feature in deep traps spectra. The Fermi level position in the core of disordered regions is located near E c -(0.85-1) eV.

Original languageEnglish
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
Pages245-247
Number of pages3
Publication statusPublished - 2006 Dec 1
Externally publishedYes
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
Volume955
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period06/11/2706/12/1

Fingerprint

Point defects
point defects
Neutrons
neutrons
Defects
Electrons
traps
Neutron irradiation
defects
neutron irradiation
electrons
Nitrogen
Hole traps
Electron irradiation
Fast reactors
nitrogen
Fermi level
Vacancies
electron irradiation
Activation energy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Lee, C. R., Lee, I-H., ... Pearton, S. J. (2006). Defects in electron and neutron irradiated n-GaN: Disordered regions versus point defects. In Advances in III-V Nitride Semiconductor Materials and Devices (pp. 245-247). (Materials Research Society Symposium Proceedings; Vol. 955).

Defects in electron and neutron irradiated n-GaN : Disordered regions versus point defects. / Polyakov, Alexander Y.; Smirnov, Nikolai B.; Govorkov, Anatoliy V.; Markov, Alexander V.; Lee, Cheul Ro; Lee, In-Hwan; Kolin, Nikolai G.; Merkurisov, Denis I.; Boiko, Vladimir M.; Wright, James S.; Pearton, Stephen J.

Advances in III-V Nitride Semiconductor Materials and Devices. 2006. p. 245-247 (Materials Research Society Symposium Proceedings; Vol. 955).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Polyakov, AY, Smirnov, NB, Govorkov, AV, Markov, AV, Lee, CR, Lee, I-H, Kolin, NG, Merkurisov, DI, Boiko, VM, Wright, JS & Pearton, SJ 2006, Defects in electron and neutron irradiated n-GaN: Disordered regions versus point defects. in Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society Symposium Proceedings, vol. 955, pp. 245-247, 2006 MRS Fall Meeting, Boston, MA, United States, 06/11/27.
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Lee CR, Lee I-H et al. Defects in electron and neutron irradiated n-GaN: Disordered regions versus point defects. In Advances in III-V Nitride Semiconductor Materials and Devices. 2006. p. 245-247. (Materials Research Society Symposium Proceedings).
Polyakov, Alexander Y. ; Smirnov, Nikolai B. ; Govorkov, Anatoliy V. ; Markov, Alexander V. ; Lee, Cheul Ro ; Lee, In-Hwan ; Kolin, Nikolai G. ; Merkurisov, Denis I. ; Boiko, Vladimir M. ; Wright, James S. ; Pearton, Stephen J. / Defects in electron and neutron irradiated n-GaN : Disordered regions versus point defects. Advances in III-V Nitride Semiconductor Materials and Devices. 2006. pp. 245-247 (Materials Research Society Symposium Proceedings).
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abstract = "Effects of 10 MeV electron and fast reactor neutron irradiations on carrier removal rate and deep traps spectra were compared for undoped n-GaN samples. It is shown that for electron irradiation the carrier removal rate is well accounted for by the difference in introduction rates of nitrogen-vacancy- related donors with activation energy 0.2 eV and of nitrogen-interstitial- related acceptors at E c -1.2 eV. In the case of neutron irradiation the introduction rate of all deep traps was much lower than the carrier removal rate indicating that the main contribution to electron removal was due to disordered regions. These regions give rise to a marked persistent photocapacitance signal and a hole-trap-like feature in deep traps spectra. The Fermi level position in the core of disordered regions is located near E c -(0.85-1) eV.",
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AU - Polyakov, Alexander Y.

AU - Smirnov, Nikolai B.

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AU - Markov, Alexander V.

AU - Lee, Cheul Ro

AU - Lee, In-Hwan

AU - Kolin, Nikolai G.

AU - Merkurisov, Denis I.

AU - Boiko, Vladimir M.

AU - Wright, James S.

AU - Pearton, Stephen J.

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N2 - Effects of 10 MeV electron and fast reactor neutron irradiations on carrier removal rate and deep traps spectra were compared for undoped n-GaN samples. It is shown that for electron irradiation the carrier removal rate is well accounted for by the difference in introduction rates of nitrogen-vacancy- related donors with activation energy 0.2 eV and of nitrogen-interstitial- related acceptors at E c -1.2 eV. In the case of neutron irradiation the introduction rate of all deep traps was much lower than the carrier removal rate indicating that the main contribution to electron removal was due to disordered regions. These regions give rise to a marked persistent photocapacitance signal and a hole-trap-like feature in deep traps spectra. The Fermi level position in the core of disordered regions is located near E c -(0.85-1) eV.

AB - Effects of 10 MeV electron and fast reactor neutron irradiations on carrier removal rate and deep traps spectra were compared for undoped n-GaN samples. It is shown that for electron irradiation the carrier removal rate is well accounted for by the difference in introduction rates of nitrogen-vacancy- related donors with activation energy 0.2 eV and of nitrogen-interstitial- related acceptors at E c -1.2 eV. In the case of neutron irradiation the introduction rate of all deep traps was much lower than the carrier removal rate indicating that the main contribution to electron removal was due to disordered regions. These regions give rise to a marked persistent photocapacitance signal and a hole-trap-like feature in deep traps spectra. The Fermi level position in the core of disordered regions is located near E c -(0.85-1) eV.

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