Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy

In-Hwan Lee, A. Y. Polyakov, E. B. Yakimov, N. B. Smirnov, I. V. Shchemerov, S. A. Tarelkin, S. I. Didenko, K. I. Tapero, R. A. Zinovyev, S. J. Pearton

Research output: Contribution to journalArticle

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Abstract

The effects of room temperature 6 MeV electron irradiation on the donor concentration, deep trap spectra, and diffusion lengths of nonequilibrium charge carriers were studied for undoped n-GaN grown by hydride vapor phase epitaxy. Changes in these parameters begin at a threshold electron fluence of 5 × 10 15 cm −2 . The diffusion lengths after this fluence decrease by a factor of 3, accompanied by a drastic increase in the density of deep electron traps with the level near E c - 1 eV. There is a strong correlation between the changes in the density of these traps and the diffusion length of irradiated n-GaN, indicating that these centers control the lifetime in radiation damaged n-GaN. This is in sharp contrast to the starting material, where the lifetimes are controlled by other deep electron traps at E c - 0.56 eV. The concentration of the latter is not strongly affected by high energy electron irradiation.

Original languageEnglish
Article number112102
JournalApplied Physics Letters
Volume110
Issue number11
DOIs
Publication statusPublished - 2017 Mar 13
Externally publishedYes

Fingerprint

vapor phase epitaxy
hydrides
diffusion length
traps
degradation
life (durability)
defects
electron irradiation
fluence
electrons
high energy electrons
charge carriers
thresholds
room temperature
radiation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, I-H., Polyakov, A. Y., Yakimov, E. B., Smirnov, N. B., Shchemerov, I. V., Tarelkin, S. A., ... Pearton, S. J. (2017). Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy. Applied Physics Letters, 110(11), [112102]. https://doi.org/10.1063/1.4978641

Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy. / Lee, In-Hwan; Polyakov, A. Y.; Yakimov, E. B.; Smirnov, N. B.; Shchemerov, I. V.; Tarelkin, S. A.; Didenko, S. I.; Tapero, K. I.; Zinovyev, R. A.; Pearton, S. J.

In: Applied Physics Letters, Vol. 110, No. 11, 112102, 13.03.2017.

Research output: Contribution to journalArticle

Lee, I-H, Polyakov, AY, Yakimov, EB, Smirnov, NB, Shchemerov, IV, Tarelkin, SA, Didenko, SI, Tapero, KI, Zinovyev, RA & Pearton, SJ 2017, 'Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy', Applied Physics Letters, vol. 110, no. 11, 112102. https://doi.org/10.1063/1.4978641
Lee, In-Hwan ; Polyakov, A. Y. ; Yakimov, E. B. ; Smirnov, N. B. ; Shchemerov, I. V. ; Tarelkin, S. A. ; Didenko, S. I. ; Tapero, K. I. ; Zinovyev, R. A. ; Pearton, S. J. / Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy. In: Applied Physics Letters. 2017 ; Vol. 110, No. 11.
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