Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy

In-Hwan Lee, A. Y. Polyakov, E. B. Yakimov, N. B. Smirnov, I. V. Shchemerov, S. A. Tarelkin, S. I. Didenko, K. I. Tapero, R. A. Zinovyev, S. J. Pearton

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Abstract

The effects of room temperature 6 MeV electron irradiation on the donor concentration, deep trap spectra, and diffusion lengths of nonequilibrium charge carriers were studied for undoped n-GaN grown by hydride vapor phase epitaxy. Changes in these parameters begin at a threshold electron fluence of 5 × 10 15 cm −2 . The diffusion lengths after this fluence decrease by a factor of 3, accompanied by a drastic increase in the density of deep electron traps with the level near E c - 1 eV. There is a strong correlation between the changes in the density of these traps and the diffusion length of irradiated n-GaN, indicating that these centers control the lifetime in radiation damaged n-GaN. This is in sharp contrast to the starting material, where the lifetimes are controlled by other deep electron traps at E c - 0.56 eV. The concentration of the latter is not strongly affected by high energy electron irradiation.

Original languageEnglish
Article number112102
JournalApplied Physics Letters
Volume110
Issue number11
DOIs
Publication statusPublished - 2017 Mar 13
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Lee, I-H., Polyakov, A. Y., Yakimov, E. B., Smirnov, N. B., Shchemerov, I. V., Tarelkin, S. A., Didenko, S. I., Tapero, K. I., Zinovyev, R. A., & Pearton, S. J. (2017). Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy. Applied Physics Letters, 110(11), [112102]. https://doi.org/10.1063/1.4978641