Degradation of ZnO nanowire devices under the ambient condition

Dong Wook Kim, Soo Han Choi, Hyun Jin Ji, Sang Woo Kim, Seung Eon Moon, So Jung Park, Gyu-Tae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Field effect transistors(FETs) made of ZnO nanowires are very sensitive to the gas environment, so that the passivation can be a good way to get reliable nanowire FETs with longer lifetime and the better mobility. The studies on the passivation effects with the positive electron-beam resist was investigated by selectively covering the part of nanowire devices between the electrodes. Reproducible electrical characteristics were recorded, reflecting the stable electrical properties by the passivation which deters the degradation of a device. Considering the defect states of oxide nanowires dominate the charge states, the pre-state just before the passivation process will be crucial to understand the reproducible and controllable device characteristics of nanowire devices.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages8-13
Number of pages6
Volume1080
Publication statusPublished - 2008 Dec 1
EventSemiconductor Nanowires-Growth, Physics, Devices and Applications - San Francisco, CA, United States
Duration: 2008 Mar 242008 Mar 28

Other

OtherSemiconductor Nanowires-Growth, Physics, Devices and Applications
CountryUnited States
CitySan Francisco, CA
Period08/3/2408/3/28

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kim, D. W., Choi, S. H., Ji, H. J., Kim, S. W., Moon, S. E., Park, S. J., & Kim, G-T. (2008). Degradation of ZnO nanowire devices under the ambient condition. In Materials Research Society Symposium Proceedings (Vol. 1080, pp. 8-13)