Degradation pattern of black phosphorus multilayer field−effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors

Byung Chul Lee, Chul Min Kim, Ho Kyun Jang, Jae Woo Lee, Min Kyu Joo, Gyu-Tae Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)


Black phosphorus (BP) has been proposed as a future optoelectronic material owing to its direct bandgap with excellent electrical performances. However, oxygen (O2) and water (H2O) molecules in an ambient condition can create undesired bubbles on the surface of the BP, resulting in hampering its excellent intrinsic properties. Here, we report the electrical degradation pattern of a mechanically exfoliated BP field–effect transistor (FET) in terms of the channel and contact, separately. Various electrical parameters such as the threshold voltage (VTH), carrier mobility (μ), contact resistance (RCT) and channel resistance (RCH) are estimated by the Y function method (YFM) with respect to time (up to 2000 min). It is found that RCT reduces and then, increases with time; whereas, the behavior of RCH is vice versa in ambient conditions. We attribute these effects to oxygen doping at the contact and the surface oxidation effects on the surface of the BP, respectively.

Original languageEnglish
Pages (from-to)637-641
Number of pages5
JournalApplied Surface Science
Publication statusPublished - 2017 Oct 15



  • Black phosphorus
  • Carrier mobility
  • Contact resistance
  • Degradation pattern
  • Threshold voltage

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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