Degradation pattern of SnO2 nanowire field effect transistors

Junhong Na, Junghwan Huh, Sung Chan Park, Daeil Kim, Dong Wook Kim, Jae Woo Lee, In Sung Hwang, Jong Heun Lee, Jeong Sook Ha, Gyu-Tae Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The degradation pattern of SnO2 nanowire field effect transistors (FETs) was investigated by using an individual SnO2 nanowire that was passivated in sections by either a PMMA (polymethylmethacrylate) or an Al2O3 layer. The PMMA passivated section showed the best mobility performance with a significant positive shift in the threshold voltage. The distinctive two-dimensional R s-μ diagram based on a serial resistor connected FET model suggested that this would be a useful tool for evaluating the efficiency for post-treatments that would improve the device performance of a single nanowire transistor.

Original languageEnglish
Article number485201
JournalNanotechnology
Volume21
Issue number48
DOIs
Publication statusPublished - 2010 Dec 3

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Na, J., Huh, J., Park, S. C., Kim, D., Kim, D. W., Lee, J. W., Hwang, I. S., Lee, J. H., Ha, J. S., & Kim, G-T. (2010). Degradation pattern of SnO2 nanowire field effect transistors. Nanotechnology, 21(48), [485201]. https://doi.org/10.1088/0957-4484/21/48/485201