Density-of-state effective mass and non-parabolicity parameter of impurity doped ZnO thin films

W. M. Kim, I. H. Kim, J. H. Ko, B. Cheong, T. S. Lee, K. S. Lee, Donghwan Kim, Tae Yeon Seong

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

The density-of-state effective masses of impurity doped polycrystalline ZnO thin films were measured by the method of four coefficients technique. By applying the first-order non-parabolicity approximation, the polaron effective mass and the bare band mass at the conduction band minimum, together with the corresponding non-parabolicity parameters, were analysed successfully. The determined perpendicular polaron mass of 0.29 me and the bare band mass of 0.247 me at the conduction band minimum corresponded very well to the previous results obtained for ZnO single crystals. The non-parabolicity parameter of 0.457 eV-1 derived for the polaron effective mass was larger than 0.33 eV-1 which was obtained for the bare band mass due to the increasing function of the Fröhlich coupling constant with respect to the bare band mass in polycrystalline ZnO films.

Original languageEnglish
Article number195409
JournalJournal of Physics D: Applied Physics
Volume41
Issue number19
DOIs
Publication statusPublished - 2008 Oct 7

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Gene Conversion
Conduction bands
Impurities
Thin films
impurities
thin films
Single crystals
conduction bands
single crystals
coefficients

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Density-of-state effective mass and non-parabolicity parameter of impurity doped ZnO thin films. / Kim, W. M.; Kim, I. H.; Ko, J. H.; Cheong, B.; Lee, T. S.; Lee, K. S.; Kim, Donghwan; Seong, Tae Yeon.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 19, 195409, 07.10.2008.

Research output: Contribution to journalArticle

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AU - Cheong, B.

AU - Lee, T. S.

AU - Lee, K. S.

AU - Kim, Donghwan

AU - Seong, Tae Yeon

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