Dependence of ferromagnetic properties on phosphorus concentration in Ga1- xMnxAs1- yPy

Xiang Li, Xinyu Liu, Sining Dong, Cameron Gorsak, Jacek K. Furdyna, Margaret Dobrowolska, Seul Ki Bac, Sang Hoon Lee, Sergei Rouvimov

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A series of Ga1- xMnxAs1- yPy thin films grown on GaAs (100) substrates by molecular beam epitaxy were systematically investigated to establish the effect of phosphorous on structural and magnetic properties of the alloy. Detailed characterization of both as-grown and annealed samples by x-ray diffraction and magnetometry were carried out. Reciprocal space map scans confirmed that the quaternary alloy is fully strained by the substrate throughout its thickness. Magnetization measurements revealed a clear trend of decreasing Curie temperature with increasing P concentration, and revealed that the magnetic easy axis gradually turns from in-plane to out-to-plane orientation as P concentration increases.

Original languageEnglish
Article number02D104
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume36
Issue number2
DOIs
Publication statusPublished - 2018 Mar 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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