Dependence of non-Abelian matrix Berry phase of a semiconductor quantum dot on geometric properties of adiabatic path

S. C. Kim, N. Y. Hwang, P. S. Park, Y. J. Kim, C. J. Lee, S. R.Eric Yang

Research output: Contribution to journalArticlepeer-review

Abstract

A matrix Berry phase can be generated and detected by all electric means in II-VI and III-V n-type semiconductor quantum dots by changing the shape of the confinement potential. This follows from general symmetry considerations in the presence of spin-orbit coupling terms. We explain these results and discuss how the matrix Berry phase depends on geometric properties of adiabatic paths. We suggest how the matrix Berry phase may be detected in transport measurements.

Original languageEnglish
Pages (from-to)4471-4481
Number of pages11
JournalInternational Journal of Modern Physics B
Volume22
Issue number25-26
DOIs
Publication statusPublished - 2008 Oct 20

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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