Dependence of non-abelian matrix berry phase of a semiconductor quantum dot on geometric properties of adiabatic path

S. C. Kim, N. Y. Hwang, P. S. Park, Y. J. Kim, C. J. Lee, Sung Ryul Yang

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

A matrix Berry phase can be generated and detected by all electric means in II-VI and III-V n-type semiconductor quantum dots by changing the shape of the confinement potential. This follows from general symmetry considerations in the presence of spinorbit coupling terms. We explain these results and discuss how the matrix Berry phase depends on geometric properties of adiabatic paths. We suggest how the matrix Berry phase may be detected in transport measurements.

Original languageEnglish
Title of host publicationCondensed Matter Theories
PublisherWorld Scientific Publishing Co.
Pages183-193
Number of pages11
Volume23
ISBN (Print)9789812836625, 9812836616, 9789812836618
DOIs
Publication statusPublished - 2008 Jan 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Dependence of non-abelian matrix berry phase of a semiconductor quantum dot on geometric properties of adiabatic path'. Together they form a unique fingerprint.

  • Cite this

    Kim, S. C., Hwang, N. Y., Park, P. S., Kim, Y. J., Lee, C. J., & Yang, S. R. (2008). Dependence of non-abelian matrix berry phase of a semiconductor quantum dot on geometric properties of adiabatic path. In Condensed Matter Theories (Vol. 23, pp. 183-193). World Scientific Publishing Co.. https://doi.org/10.1142/9789812836625_0019