Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

Lu Liu, Chien Fong Lo, Yuyin Xi, Yuxi Wang, Fan Ren, Stephen J. Pearton, Hong Yeol Kim, Ji Hyun Kim, Robert C. Fitch, Dennis E. Walker, Kelson D. Chabak, James K. Gillespie, Stephen E. Tetlak, Glen D. Via, Antonio Crespo, Ivan I. Kravchenko

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 5 × 1015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11, 22, and 38, and decreases in drain saturation current of 10, 24, and 46 for HEMTs exposed to 15, 10, and 5 MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121-336 cm-1 over the range of proton energies employed in this study.

Original languageEnglish
Article number022201
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume31
Issue number2
DOIs
Publication statusPublished - 2013 Mar 1

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High electron mobility transistors
proton energy
high electron mobility transistors
Protons
degradation
Degradation
linear energy transfer (LET)
irradiation
proton irradiation
protons
Irradiation
transconductance
Proton irradiation
energy
Transconductance
fluence
leakage
Leakage currents
energy dissipation
Energy transfer

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors. / Liu, Lu; Lo, Chien Fong; Xi, Yuyin; Wang, Yuxi; Ren, Fan; Pearton, Stephen J.; Kim, Hong Yeol; Kim, Ji Hyun; Fitch, Robert C.; Walker, Dennis E.; Chabak, Kelson D.; Gillespie, James K.; Tetlak, Stephen E.; Via, Glen D.; Crespo, Antonio; Kravchenko, Ivan I.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 31, No. 2, 022201, 01.03.2013.

Research output: Contribution to journalArticle

Liu, L, Lo, CF, Xi, Y, Wang, Y, Ren, F, Pearton, SJ, Kim, HY, Kim, JH, Fitch, RC, Walker, DE, Chabak, KD, Gillespie, JK, Tetlak, SE, Via, GD, Crespo, A & Kravchenko, II 2013, 'Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 31, no. 2, 022201. https://doi.org/10.1116/1.4788904
Liu, Lu ; Lo, Chien Fong ; Xi, Yuyin ; Wang, Yuxi ; Ren, Fan ; Pearton, Stephen J. ; Kim, Hong Yeol ; Kim, Ji Hyun ; Fitch, Robert C. ; Walker, Dennis E. ; Chabak, Kelson D. ; Gillespie, James K. ; Tetlak, Stephen E. ; Via, Glen D. ; Crespo, Antonio ; Kravchenko, Ivan I. / Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2013 ; Vol. 31, No. 2.
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