Dependency of Si Content on the Performance of Amorphous SiZnSnO Thin Film Transistor Based Logic Circuits for Next-Generation Integrated Circuits

Byeong Hyeon Lee, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journalArticle

Abstract

On the ZTO system, Si was found to be considered as an oxygen vacancy suppressor due to Si atom having high bonding strength with oxygen. The a-SZTO thin films fabricated with thin-film transistors showed a tendency of decreasing electrical properties as the Si content increased. In addition, various resistances, such as total resistance (Rt), contact resistance (Rc), and sheet resistance (Rsh) depending on Si content were analyzed using transmission line method. It was also found that Rsh was increased due to suppressing oxygen vacancies by Si atom. Threshold voltage can be controlled through simple adjustment of Si content and a NOT logic circuit is fabricated through this. In the fabricated two NOT logic circuits, high voltage gain of 11.86 and 9.23 was obtained at VDD = 5 V, respectively. In addition, we found that even more complex NAND and NOR logic circuits work just like truth tables. Therefore, logic circuits fabricated according to simple Si content can be applied to next generation integrated circuits.

Original languageEnglish
Pages (from-to)175-180
Number of pages6
JournalTransactions on Electrical and Electronic Materials
Volume20
Issue number3
DOIs
Publication statusPublished - 2019 Jun 1

Fingerprint

Logic circuits
Amorphous films
Thin film transistors
Integrated circuits
Oxygen vacancies
Atoms
Sheet resistance
Contact resistance
Threshold voltage
Electric lines
Electric properties
Oxygen
Thin films
Electric potential

Keywords

  • Amorphous oxide semiconductor
  • Logic circuit
  • Thin film transistor
  • Transmission line method

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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title = "Dependency of Si Content on the Performance of Amorphous SiZnSnO Thin Film Transistor Based Logic Circuits for Next-Generation Integrated Circuits",
abstract = "On the ZTO system, Si was found to be considered as an oxygen vacancy suppressor due to Si atom having high bonding strength with oxygen. The a-SZTO thin films fabricated with thin-film transistors showed a tendency of decreasing electrical properties as the Si content increased. In addition, various resistances, such as total resistance (Rt), contact resistance (Rc), and sheet resistance (Rsh) depending on Si content were analyzed using transmission line method. It was also found that Rsh was increased due to suppressing oxygen vacancies by Si atom. Threshold voltage can be controlled through simple adjustment of Si content and a NOT logic circuit is fabricated through this. In the fabricated two NOT logic circuits, high voltage gain of 11.86 and 9.23 was obtained at VDD = 5 V, respectively. In addition, we found that even more complex NAND and NOR logic circuits work just like truth tables. Therefore, logic circuits fabricated according to simple Si content can be applied to next generation integrated circuits.",
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AU - Lee, Byeong Hyeon

AU - Kim, Sangsig

AU - Lee, Sang Yeol

PY - 2019/6/1

Y1 - 2019/6/1

N2 - On the ZTO system, Si was found to be considered as an oxygen vacancy suppressor due to Si atom having high bonding strength with oxygen. The a-SZTO thin films fabricated with thin-film transistors showed a tendency of decreasing electrical properties as the Si content increased. In addition, various resistances, such as total resistance (Rt), contact resistance (Rc), and sheet resistance (Rsh) depending on Si content were analyzed using transmission line method. It was also found that Rsh was increased due to suppressing oxygen vacancies by Si atom. Threshold voltage can be controlled through simple adjustment of Si content and a NOT logic circuit is fabricated through this. In the fabricated two NOT logic circuits, high voltage gain of 11.86 and 9.23 was obtained at VDD = 5 V, respectively. In addition, we found that even more complex NAND and NOR logic circuits work just like truth tables. Therefore, logic circuits fabricated according to simple Si content can be applied to next generation integrated circuits.

AB - On the ZTO system, Si was found to be considered as an oxygen vacancy suppressor due to Si atom having high bonding strength with oxygen. The a-SZTO thin films fabricated with thin-film transistors showed a tendency of decreasing electrical properties as the Si content increased. In addition, various resistances, such as total resistance (Rt), contact resistance (Rc), and sheet resistance (Rsh) depending on Si content were analyzed using transmission line method. It was also found that Rsh was increased due to suppressing oxygen vacancies by Si atom. Threshold voltage can be controlled through simple adjustment of Si content and a NOT logic circuit is fabricated through this. In the fabricated two NOT logic circuits, high voltage gain of 11.86 and 9.23 was obtained at VDD = 5 V, respectively. In addition, we found that even more complex NAND and NOR logic circuits work just like truth tables. Therefore, logic circuits fabricated according to simple Si content can be applied to next generation integrated circuits.

KW - Amorphous oxide semiconductor

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KW - Thin film transistor

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