Deposition of Europium Oxide on Si and its optical properties depending on thermal annealing conditions

Young Chul Shin; Shi Jong Leem; Chul Min Kim; Su Jin Kim; Yun Mo Sung; Cheol Koo Hahn; Jong Hyeob Baek; Tae Geun Kim

doi:10.1007/s10832-008-9449-7

Deposition of Europium Oxide on Si and its optical properties depending on thermal annealing conditions

Young Chul Shin, Shi Jong Leem, Chul Min Kim, Su Jin Kim, Yun Mo Sung, Cheol Koo Hahn, Jong Hyeob Baek, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium compound thin films on Si substrates. The films were deposited by radio-frequency magnetron sputtering and subsequently annealed in N₂ or O₂ ambient gas by rapid thermal annealing (RTA). The results of X-ray diffraction indicate that the resulting europium compound annealed in N₂ ambient have several silicate phases such as EuSiO₃ and Eu₂SiO₄ compared to those annealed in O₂ ambient. The spectral results revealed that a broad luminescence associated with Eu²⁺ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, was observed from the thin film annealed at 1000 °C in N₂ ambient. However, a series of narrow PL spectra from Eu³⁺ ions were observed from the film annealed in O₂ ambient.

Original language	English
Pages (from-to)	326-330
Number of pages	5
Journal	Journal of Electroceramics
Volume	23
Issue number	2-4
DOIs	https://doi.org/10.1007/s10832-008-9449-7
Publication status	Published - 2009 Oct

Keywords

Europium silicate
Photoluminescence
RF-sputtering
Rapid thermal annealing

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Mechanics of Materials
Electrical and Electronic Engineering
Materials Chemistry

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Deposition of Europium Oxide on Si and its optical properties depending on thermal annealing conditions. / Shin, Young Chul; Leem, Shi Jong; Kim, Chul Min; Kim, Su Jin; Sung, Yun Mo; Hahn, Cheol Koo; Baek, Jong Hyeob; Kim, Tae Geun.

In: Journal of Electroceramics, Vol. 23, No. 2-4, 10.2009, p. 326-330.

Research output: Contribution to journal › Article › peer-review

@article{9b311337b9fa4282bb33df1defc77c94,

title = "Deposition of Europium Oxide on Si and its optical properties depending on thermal annealing conditions",

abstract = "We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium compound thin films on Si substrates. The films were deposited by radio-frequency magnetron sputtering and subsequently annealed in N2 or O2 ambient gas by rapid thermal annealing (RTA). The results of X-ray diffraction indicate that the resulting europium compound annealed in N2 ambient have several silicate phases such as EuSiO3 and Eu2SiO4 compared to those annealed in O2 ambient. The spectral results revealed that a broad luminescence associated with Eu2+ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, was observed from the thin film annealed at 1000 °C in N2 ambient. However, a series of narrow PL spectra from Eu3+ ions were observed from the film annealed in O2 ambient.",

keywords = "Europium silicate, Photoluminescence, RF-sputtering, Rapid thermal annealing",

author = "Shin, {Young Chul} and Leem, {Shi Jong} and Kim, {Chul Min} and Kim, {Su Jin} and Sung, {Yun Mo} and Hahn, {Cheol Koo} and Baek, {Jong Hyeob} and Kim, {Tae Geun}",

year = "2009",

month = oct,

doi = "10.1007/s10832-008-9449-7",

language = "English",

volume = "23",

pages = "326--330",

journal = "Journal of Electroceramics",

issn = "1385-3449",

publisher = "Springer Netherlands",

number = "2-4",

}

TY - JOUR

T1 - Deposition of Europium Oxide on Si and its optical properties depending on thermal annealing conditions

AU - Shin, Young Chul

AU - Leem, Shi Jong

AU - Kim, Chul Min

AU - Kim, Su Jin

AU - Sung, Yun Mo

AU - Hahn, Cheol Koo

AU - Baek, Jong Hyeob

AU - Kim, Tae Geun

PY - 2009/10

Y1 - 2009/10

N2 - We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium compound thin films on Si substrates. The films were deposited by radio-frequency magnetron sputtering and subsequently annealed in N2 or O2 ambient gas by rapid thermal annealing (RTA). The results of X-ray diffraction indicate that the resulting europium compound annealed in N2 ambient have several silicate phases such as EuSiO3 and Eu2SiO4 compared to those annealed in O2 ambient. The spectral results revealed that a broad luminescence associated with Eu2+ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, was observed from the thin film annealed at 1000 °C in N2 ambient. However, a series of narrow PL spectra from Eu3+ ions were observed from the film annealed in O2 ambient.

AB - We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium compound thin films on Si substrates. The films were deposited by radio-frequency magnetron sputtering and subsequently annealed in N2 or O2 ambient gas by rapid thermal annealing (RTA). The results of X-ray diffraction indicate that the resulting europium compound annealed in N2 ambient have several silicate phases such as EuSiO3 and Eu2SiO4 compared to those annealed in O2 ambient. The spectral results revealed that a broad luminescence associated with Eu2+ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, was observed from the thin film annealed at 1000 °C in N2 ambient. However, a series of narrow PL spectra from Eu3+ ions were observed from the film annealed in O2 ambient.

KW - Europium silicate

KW - Photoluminescence

KW - RF-sputtering

KW - Rapid thermal annealing

UR - http://www.scopus.com/inward/record.url?scp=73449096809&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73449096809&partnerID=8YFLogxK

U2 - 10.1007/s10832-008-9449-7

DO - 10.1007/s10832-008-9449-7

M3 - Article

AN - SCOPUS:73449096809

VL - 23

SP - 326

EP - 330

JO - Journal of Electroceramics

JF - Journal of Electroceramics

SN - 1385-3449

IS - 2-4

ER -