Deposition of Europium Oxide on Si and its optical properties depending on thermal annealing conditions

Young Chul Shin, Shi Jong Leem, Chul Min Kim, Su Jin Kim, Yun Mo Sung, Cheol Koo Hahn, Jong Hyeob Baek, Tae Geun Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium compound thin films on Si substrates. The films were deposited by radio-frequency magnetron sputtering and subsequently annealed in N2 or O2 ambient gas by rapid thermal annealing (RTA). The results of X-ray diffraction indicate that the resulting europium compound annealed in N2 ambient have several silicate phases such as EuSiO3 and Eu2SiO4 compared to those annealed in O2 ambient. The spectral results revealed that a broad luminescence associated with Eu2+ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, was observed from the thin film annealed at 1000 °C in N2 ambient. However, a series of narrow PL spectra from Eu3+ ions were observed from the film annealed in O2 ambient.

Original languageEnglish
Pages (from-to)326-330
Number of pages5
JournalJournal of Electroceramics
Volume23
Issue number2-4
DOIs
Publication statusPublished - 2009 Oct 1

Keywords

  • Europium silicate
  • Photoluminescence
  • Rapid thermal annealing
  • RF-sputtering

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Mechanics of Materials

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