Depth-controllable ultra shallow indium gallium zinc oxide/gallium arsenide hetero junction diode

Seong Uk Yang, Seung Ha Choi, Jongtaek Lee, Jeehwan Kim, Woo Shik Jung, Hyun-Yong Yu, Yonghan Roh, Jin Hong Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300 °C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. Oncurrent density (0.02 A/cm2) and on/off-current ratio (4 × 102) were obtained in the junction annealed at 300 °C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15 nm and 30 nm thick n-IGZO samples.

Original languageEnglish
Pages (from-to)228-230
Number of pages3
JournalJournal of Alloys and Compounds
Volume561
DOIs
Publication statusPublished - 2013 Jun 5

Fingerprint

Zinc Oxide
Gallium
Indium
Gallium arsenide
Zinc oxide
Diodes
Thickness control
Secondary ion mass spectrometry
Fabrication
Temperature
gallium arsenide
III-V semiconductors

Keywords

  • Gallium arsenide
  • Hetero-junction
  • IGZO

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys

Cite this

Depth-controllable ultra shallow indium gallium zinc oxide/gallium arsenide hetero junction diode. / Yang, Seong Uk; Choi, Seung Ha; Lee, Jongtaek; Kim, Jeehwan; Jung, Woo Shik; Yu, Hyun-Yong; Roh, Yonghan; Park, Jin Hong.

In: Journal of Alloys and Compounds, Vol. 561, 05.06.2013, p. 228-230.

Research output: Contribution to journalArticle

Yang, Seong Uk ; Choi, Seung Ha ; Lee, Jongtaek ; Kim, Jeehwan ; Jung, Woo Shik ; Yu, Hyun-Yong ; Roh, Yonghan ; Park, Jin Hong. / Depth-controllable ultra shallow indium gallium zinc oxide/gallium arsenide hetero junction diode. In: Journal of Alloys and Compounds. 2013 ; Vol. 561. pp. 228-230.
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AU - Jung, Woo Shik

AU - Yu, Hyun-Yong

AU - Roh, Yonghan

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