Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal

Eui Kwan Koh, Il Woo Park, H. Choi, M. Yoon, Sung Ho Choh, Hang Sung Kim, Yong Min Cho, Sangsig Kim, Sung Soo Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Results of the cathodoluminescence (CL) and micro-Raman measurements in a freestanding 300 μm-thick Si-doped GaN single crystal grown by hydride vapor phase epitaxy (HVPE) are presented. The depth-dependent CL results along the c-axis on the cross-section show that the integrated CL intensities of the near-band-gap emission gradually increase with the CL linewidths broadened from the N face to the Ga face. The physical origin of increase in the CL intensity has been studied by the micro-Raman measurements along the c-axis, which revealed the carrier concentration gradually increases from 2.3×10 17 (the N face) to 9.3×1017 cm-3 (the Ga face). Our experimental evidence indicates that the broadening of the CL linewidth is due to the increased fluctuation of the local bandgap caused by the heavier concentration of the donor impurities.

Original languageEnglish
Pages (from-to)37-42
Number of pages6
JournalJournal of Crystal Growth
Volume276
Issue number1-2
DOIs
Publication statusPublished - 2005 Mar 15

Fingerprint

Vapor phase epitaxy
Cathodoluminescence
cathodoluminescence
doped crystals
Hydrides
vapor phase epitaxy
hydrides
Optical properties
Single crystals
optical properties
single crystals
Linewidth
Energy gap
Carrier concentration
Impurities
impurities
cross sections

Keywords

  • A1. Cathodoluminescence
  • A1. Raman scattering
  • A3. Hydride vapor phase epitaxy
  • B1. GaN

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Koh, E. K., Park, I. W., Choi, H., Yoon, M., Choh, S. H., Kim, H. S., ... Park, S. S. (2005). Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal. Journal of Crystal Growth, 276(1-2), 37-42. https://doi.org/10.1016/j.jcrysgro.2004.10.156

Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal. / Koh, Eui Kwan; Park, Il Woo; Choi, H.; Yoon, M.; Choh, Sung Ho; Kim, Hang Sung; Cho, Yong Min; Kim, Sangsig; Park, Sung Soo.

In: Journal of Crystal Growth, Vol. 276, No. 1-2, 15.03.2005, p. 37-42.

Research output: Contribution to journalArticle

Koh, EK, Park, IW, Choi, H, Yoon, M, Choh, SH, Kim, HS, Cho, YM, Kim, S & Park, SS 2005, 'Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal', Journal of Crystal Growth, vol. 276, no. 1-2, pp. 37-42. https://doi.org/10.1016/j.jcrysgro.2004.10.156
Koh, Eui Kwan ; Park, Il Woo ; Choi, H. ; Yoon, M. ; Choh, Sung Ho ; Kim, Hang Sung ; Cho, Yong Min ; Kim, Sangsig ; Park, Sung Soo. / Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal. In: Journal of Crystal Growth. 2005 ; Vol. 276, No. 1-2. pp. 37-42.
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AU - Koh, Eui Kwan

AU - Park, Il Woo

AU - Choi, H.

AU - Yoon, M.

AU - Choh, Sung Ho

AU - Kim, Hang Sung

AU - Cho, Yong Min

AU - Kim, Sangsig

AU - Park, Sung Soo

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N2 - Results of the cathodoluminescence (CL) and micro-Raman measurements in a freestanding 300 μm-thick Si-doped GaN single crystal grown by hydride vapor phase epitaxy (HVPE) are presented. The depth-dependent CL results along the c-axis on the cross-section show that the integrated CL intensities of the near-band-gap emission gradually increase with the CL linewidths broadened from the N face to the Ga face. The physical origin of increase in the CL intensity has been studied by the micro-Raman measurements along the c-axis, which revealed the carrier concentration gradually increases from 2.3×10 17 (the N face) to 9.3×1017 cm-3 (the Ga face). Our experimental evidence indicates that the broadening of the CL linewidth is due to the increased fluctuation of the local bandgap caused by the heavier concentration of the donor impurities.

AB - Results of the cathodoluminescence (CL) and micro-Raman measurements in a freestanding 300 μm-thick Si-doped GaN single crystal grown by hydride vapor phase epitaxy (HVPE) are presented. The depth-dependent CL results along the c-axis on the cross-section show that the integrated CL intensities of the near-band-gap emission gradually increase with the CL linewidths broadened from the N face to the Ga face. The physical origin of increase in the CL intensity has been studied by the micro-Raman measurements along the c-axis, which revealed the carrier concentration gradually increases from 2.3×10 17 (the N face) to 9.3×1017 cm-3 (the Ga face). Our experimental evidence indicates that the broadening of the CL linewidth is due to the increased fluctuation of the local bandgap caused by the heavier concentration of the donor impurities.

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