Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO2 collector structure applicable to high voltage to 1700V

Han Sin Lee, Yo Han Kim, Ey Goo Kang, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we propose a new structure that improves the on-state voltage drop along with the switching speed in Insulated Gate Bipolar Transistors(lGBTs), which is widely applied in high voltage semiconductors. The proposed structure is unique that the collector area is divided by SiO 2 regions, whereas in existing IGBTs, the collector has a planar P+ structure. The process and device simulation results show remarkably improved on-state and switching characteristics. The current and electric field distributions indicate that the segmented collector structure increases the electric field near the SiO2 edge which leads to an increase in electron current and finally a decrease in on-state voltage drop to 30%-40%. Also, since the area of the P+ region decreases compared to existing structures, the hole injection decreases which leads to an improved switching speed to 30%.

Original languageEnglish
Title of host publicationICSE 2006
Subtitle of host publication2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages489-492
Number of pages4
DOIs
Publication statusPublished - 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: 2006 Nov 292006 Dec 1

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CountryMalaysia
CityKuala Lumpur
Period06/11/2906/12/1

ASJC Scopus subject areas

  • Engineering(all)

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