Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO2 collector structure applicable to high voltage to 1700V

Han Sin Lee, Yo Han Kim, Ey Goo Kang, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we propose a new structure that improves the on-state voltage drop along with the switching speed in Insulated Gate Bipolar Transistors(lGBTs), which is widely applied in high voltage semiconductors. The proposed structure is unique that the collector area is divided by SiO 2 regions, whereas in existing IGBTs, the collector has a planar P+ structure. The process and device simulation results show remarkably improved on-state and switching characteristics. The current and electric field distributions indicate that the segmented collector structure increases the electric field near the SiO2 edge which leads to an increase in electron current and finally a decrease in on-state voltage drop to 30%-40%. Also, since the area of the P+ region decreases compared to existing structures, the hole injection decreases which leads to an improved switching speed to 30%.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages489-492
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: 2006 Nov 292006 Dec 1

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CountryMalaysia
CityKuala Lumpur
Period06/11/2906/12/1

Fingerprint

Bipolar transistors
Insulated gate bipolar transistors (IGBT)
Electric potential
Electric fields
Semiconductor materials
Electrons
Voltage drop

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Lee, H. S., Kim, Y. H., Kang, E. G., & Sung, M. Y. (2006). Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO2 collector structure applicable to high voltage to 1700V. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 489-492). [4266660] https://doi.org/10.1109/SMELEC.2006.381110

Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO2 collector structure applicable to high voltage to 1700V. / Lee, Han Sin; Kim, Yo Han; Kang, Ey Goo; Sung, Man Young.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 489-492 4266660.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, HS, Kim, YH, Kang, EG & Sung, MY 2006, Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO2 collector structure applicable to high voltage to 1700V. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4266660, pp. 489-492, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, Malaysia, 06/11/29. https://doi.org/10.1109/SMELEC.2006.381110
Lee HS, Kim YH, Kang EG, Sung MY. Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO2 collector structure applicable to high voltage to 1700V. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 489-492. 4266660 https://doi.org/10.1109/SMELEC.2006.381110
Lee, Han Sin ; Kim, Yo Han ; Kang, Ey Goo ; Sung, Man Young. / Design and analysis of Insulate Gate Bipolar Transistor (IGBT) with P+/SiO2 collector structure applicable to high voltage to 1700V. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. pp. 489-492
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