Design and fabrication of a narrow stripe GaAs/AIGaAs quantum wire laser

A high-performance narrow-stripe GaAs/AIGaAs quantum wire (QWR) laser with a p-n junction current-blocking layer has been designed, simulated and fabricated. For the design's aspect, the thicknesses and the doping concentrations of p- and n-current-blocking layers, the conductive stripe width, the calculated light wavelength of both quantum well and quantum wire, etc. were considered. In addition, to see the effect of current-confinement into the QWR active region, the physical structure of the QWR laser was modeled as a simple electrical circuit. Based on these simulated results, the QWR laser was fabricated using two-step MOCVD growth with a wet etching technique.