Design and fabrication of a narrow stripe GaAs/AIGaAs quantum wire laser

Tae Geun Kim, Eun Kyu Kim, Suk Ki Min, Jong Jeon, Si Jong Jeon, Jung Ho Park

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5 Citations (Scopus)

Abstract

A high-performance narrow-stripe GaAs/AIGaAs quantum wire (QWR) laser with a p-n junction current-blocking layer has been designed, simulated and fabricated. For the design's aspect, the thicknesses and the doping concentrations of p- and n-current-blocking layers, the conductive stripe width, the calculated light wavelength of both quantum well and quantum wire, etc. were considered. In addition, to see the effect of current-confinement into the QWR active region, the physical structure of the QWR laser was modeled as a simple electrical circuit. Based on these simulated results, the QWR laser was fabricated using two-step MOCVD growth with a wet etching technique.

Original languageEnglish
Pages (from-to)S123-S126
JournalJournal of the Korean Physical Society
Volume30
Issue numberSUPPL. PART 1
Publication statusPublished - 1997

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Kim, T. G., Kim, E. K., Min, S. K., Jeon, J., Jeon, S. J., & Park, J. H. (1997). Design and fabrication of a narrow stripe GaAs/AIGaAs quantum wire laser. Journal of the Korean Physical Society, 30(SUPPL. PART 1), S123-S126.