Design and fabrication of a narrow stripe GaAs/AIGaAs quantum wire laser

Tae Geun Kim, Eun Kyu Kim, Suk Ki Min, Jong Jeon, Si Jong Jeon, Jung ho Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A high-performance narrow-stripe GaAs/AIGaAs quantum wire (QWR) laser with a p-n junction current-blocking layer has been designed, simulated and fabricated. For the design's aspect, the thicknesses and the doping concentrations of p- and n-current-blocking layers, the conductive stripe width, the calculated light wavelength of both quantum well and quantum wire, etc. were considered. In addition, to see the effect of current-confinement into the QWR active region, the physical structure of the QWR laser was modeled as a simple electrical circuit. Based on these simulated results, the QWR laser was fabricated using two-step MOCVD growth with a wet etching technique.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume30
Issue numberSUPPL. PART 1
Publication statusPublished - 1997 Dec 1

Fingerprint

quantum wires
fabrication
lasers
p-n junctions
metalorganic chemical vapor deposition
etching
quantum wells
wire
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Design and fabrication of a narrow stripe GaAs/AIGaAs quantum wire laser. / Kim, Tae Geun; Kim, Eun Kyu; Min, Suk Ki; Jeon, Jong; Jeon, Si Jong; Park, Jung ho.

In: Journal of the Korean Physical Society, Vol. 30, No. SUPPL. PART 1, 01.12.1997.

Research output: Contribution to journalArticle

Kim, Tae Geun ; Kim, Eun Kyu ; Min, Suk Ki ; Jeon, Jong ; Jeon, Si Jong ; Park, Jung ho. / Design and fabrication of a narrow stripe GaAs/AIGaAs quantum wire laser. In: Journal of the Korean Physical Society. 1997 ; Vol. 30, No. SUPPL. PART 1.
@article{0bbe8681e3b748199facd1e256f51453,
title = "Design and fabrication of a narrow stripe GaAs/AIGaAs quantum wire laser",
abstract = "A high-performance narrow-stripe GaAs/AIGaAs quantum wire (QWR) laser with a p-n junction current-blocking layer has been designed, simulated and fabricated. For the design's aspect, the thicknesses and the doping concentrations of p- and n-current-blocking layers, the conductive stripe width, the calculated light wavelength of both quantum well and quantum wire, etc. were considered. In addition, to see the effect of current-confinement into the QWR active region, the physical structure of the QWR laser was modeled as a simple electrical circuit. Based on these simulated results, the QWR laser was fabricated using two-step MOCVD growth with a wet etching technique.",
author = "Kim, {Tae Geun} and Kim, {Eun Kyu} and Min, {Suk Ki} and Jong Jeon and Jeon, {Si Jong} and Park, {Jung ho}",
year = "1997",
month = "12",
day = "1",
language = "English",
volume = "30",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SUPPL. PART 1",

}

TY - JOUR

T1 - Design and fabrication of a narrow stripe GaAs/AIGaAs quantum wire laser

AU - Kim, Tae Geun

AU - Kim, Eun Kyu

AU - Min, Suk Ki

AU - Jeon, Jong

AU - Jeon, Si Jong

AU - Park, Jung ho

PY - 1997/12/1

Y1 - 1997/12/1

N2 - A high-performance narrow-stripe GaAs/AIGaAs quantum wire (QWR) laser with a p-n junction current-blocking layer has been designed, simulated and fabricated. For the design's aspect, the thicknesses and the doping concentrations of p- and n-current-blocking layers, the conductive stripe width, the calculated light wavelength of both quantum well and quantum wire, etc. were considered. In addition, to see the effect of current-confinement into the QWR active region, the physical structure of the QWR laser was modeled as a simple electrical circuit. Based on these simulated results, the QWR laser was fabricated using two-step MOCVD growth with a wet etching technique.

AB - A high-performance narrow-stripe GaAs/AIGaAs quantum wire (QWR) laser with a p-n junction current-blocking layer has been designed, simulated and fabricated. For the design's aspect, the thicknesses and the doping concentrations of p- and n-current-blocking layers, the conductive stripe width, the calculated light wavelength of both quantum well and quantum wire, etc. were considered. In addition, to see the effect of current-confinement into the QWR active region, the physical structure of the QWR laser was modeled as a simple electrical circuit. Based on these simulated results, the QWR laser was fabricated using two-step MOCVD growth with a wet etching technique.

UR - http://www.scopus.com/inward/record.url?scp=0345533015&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345533015&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0345533015

VL - 30

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL. PART 1

ER -