Design and fabrication of InAs/GaAs quantum-dot resonant-cavity avalanche photodetectors

Dong Ho Kim, Cheong Hyun Roh, Hong Joo Song, Yeon Shik Choi, Cheol Koo Hahn, Hoon Kim, Jung Hyuk Koh, Tae Geun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

InAs/GaAs quantum dot (QD) resonant-cavity avalanche photodetectors (RC-APD) operating at 1 μm were designed and fabricated. The structure of RC-APD was designed such that it would resonate with the light incident from the top mesa. The RC-APD was grown by solid-source molecular-beam epitaxy on a semi-insulating GaAs substrate. The area of the top mesa was 10 × 10 μm2 and the absorbing region consisted of a 2.1 monolayer (ML) InAs QD layer sandwiched by two 75.5 nm-thick GaAs spacers. One of the RC-APDs exhibited a large gain factor M ∼100 and a low dark current of ∼10 nA at a breakdown voltage of ∼20 V.

Original languageEnglish
Pages (from-to)e172-e175
JournalCurrent Applied Physics
Volume6
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2006 Aug

Keywords

  • Avalanche photodetector
  • Molecular beam epitaxy
  • Near-IR (NIR)
  • Resonant-cavity

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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    Kim, D. H., Roh, C. H., Song, H. J., Choi, Y. S., Hahn, C. K., Kim, H., Koh, J. H., & Kim, T. G. (2006). Design and fabrication of InAs/GaAs quantum-dot resonant-cavity avalanche photodetectors. Current Applied Physics, 6(SUPPL. 1), e172-e175. https://doi.org/10.1016/j.cap.2006.01.033