Design and fabrication of Si subwavelength structures for broadband antireflection in mid-infrared ranges

See Eun Cheon, Jea Young Choi, Taek Sung Lee, Doo Seok Jeong, Kyeong Seok Lee, Wook Soeng Lee, Won Mok Kim, Heon Lee, Inho Kim

Research output: Contribution to journalArticle

Abstract

Broadband antireflection in infrared ranges is essential for various applications such as photovoltaics, light-emitting diodes, and optical lenses for thermal imaging. We performed numerical simulations to find the optimal design of Si subwavelength structures for broadband antireflection in the mid-infrared wavelength ranges from 3 μm to 20 μm. By using the simulation results as a design guide, we fabricated Si subwavelength structures in the form of ellipsoids and paraboloids with self-assembled silica bead monolayers as dry etch masks. The silica bead monolayers on the Si wafers in large area were prepared by colloidal lithography based on spin coating of silica beads dispersed in organic binary solvents. A two-step dry etch process with combination of isotropic and anisotropic etching enables fabrication of the Si subwavelength structures of a high aspect ratio, and we demonstrated broadband antireflection in the mid-infrared wavelength ranges.

Original languageEnglish
Pages (from-to)8925-8934
Number of pages10
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number12
DOIs
Publication statusPublished - 2017 Jan 1

Keywords

  • Antireflection
  • Colloidal lithography
  • Mid-infrared
  • Optical design
  • Silicon subwavelength structure

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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  • Cite this

    Cheon, S. E., Choi, J. Y., Lee, T. S., Jeong, D. S., Lee, K. S., Lee, W. S., Kim, W. M., Lee, H., & Kim, I. (2017). Design and fabrication of Si subwavelength structures for broadband antireflection in mid-infrared ranges. Journal of Nanoscience and Nanotechnology, 17(12), 8925-8934. https://doi.org/10.1166/jnn.2017.13910