Design and fabrication of Si subwavelength structures for broadband antireflection in mid-infrared ranges

See Eun Cheon, Jea Young Choi, Taek Sung Lee, Doo Seok Jeong, Kyeong Seok Lee, Wook Soeng Lee, Won Mok Kim, Heon Lee, Inho Kim

Research output: Contribution to journalArticle

Abstract

Broadband antireflection in infrared ranges is essential for various applications such as photovoltaics, light-emitting diodes, and optical lenses for thermal imaging. We performed numerical simulations to find the optimal design of Si subwavelength structures for broadband antireflection in the mid-infrared wavelength ranges from 3 μm to 20 μm. By using the simulation results as a design guide, we fabricated Si subwavelength structures in the form of ellipsoids and paraboloids with self-assembled silica bead monolayers as dry etch masks. The silica bead monolayers on the Si wafers in large area were prepared by colloidal lithography based on spin coating of silica beads dispersed in organic binary solvents. A two-step dry etch process with combination of isotropic and anisotropic etching enables fabrication of the Si subwavelength structures of a high aspect ratio, and we demonstrated broadband antireflection in the mid-infrared wavelength ranges.

Original languageEnglish
Pages (from-to)8925-8934
Number of pages10
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number12
DOIs
Publication statusPublished - 2017 Jan 1

Fingerprint

Silicon Dioxide
beads
Silica
silicon dioxide
broadband
Infrared radiation
Fabrication
fabrication
Monolayers
parabolic bodies
Anisotropic etching
Wavelength
Spin coating
Infrared imaging
Masks
ellipsoids
high aspect ratio
wavelengths
Lithography
Lenses

Keywords

  • Antireflection
  • Colloidal lithography
  • Mid-infrared
  • Optical design
  • Silicon subwavelength structure

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Design and fabrication of Si subwavelength structures for broadband antireflection in mid-infrared ranges. / Cheon, See Eun; Choi, Jea Young; Lee, Taek Sung; Jeong, Doo Seok; Lee, Kyeong Seok; Lee, Wook Soeng; Kim, Won Mok; Lee, Heon; Kim, Inho.

In: Journal of Nanoscience and Nanotechnology, Vol. 17, No. 12, 01.01.2017, p. 8925-8934.

Research output: Contribution to journalArticle

Cheon, See Eun ; Choi, Jea Young ; Lee, Taek Sung ; Jeong, Doo Seok ; Lee, Kyeong Seok ; Lee, Wook Soeng ; Kim, Won Mok ; Lee, Heon ; Kim, Inho. / Design and fabrication of Si subwavelength structures for broadband antireflection in mid-infrared ranges. In: Journal of Nanoscience and Nanotechnology. 2017 ; Vol. 17, No. 12. pp. 8925-8934.
@article{216cbd39698e407292502e5cad7d4f54,
title = "Design and fabrication of Si subwavelength structures for broadband antireflection in mid-infrared ranges",
abstract = "Broadband antireflection in infrared ranges is essential for various applications such as photovoltaics, light-emitting diodes, and optical lenses for thermal imaging. We performed numerical simulations to find the optimal design of Si subwavelength structures for broadband antireflection in the mid-infrared wavelength ranges from 3 μm to 20 μm. By using the simulation results as a design guide, we fabricated Si subwavelength structures in the form of ellipsoids and paraboloids with self-assembled silica bead monolayers as dry etch masks. The silica bead monolayers on the Si wafers in large area were prepared by colloidal lithography based on spin coating of silica beads dispersed in organic binary solvents. A two-step dry etch process with combination of isotropic and anisotropic etching enables fabrication of the Si subwavelength structures of a high aspect ratio, and we demonstrated broadband antireflection in the mid-infrared wavelength ranges.",
keywords = "Antireflection, Colloidal lithography, Mid-infrared, Optical design, Silicon subwavelength structure",
author = "Cheon, {See Eun} and Choi, {Jea Young} and Lee, {Taek Sung} and Jeong, {Doo Seok} and Lee, {Kyeong Seok} and Lee, {Wook Soeng} and Kim, {Won Mok} and Heon Lee and Inho Kim",
year = "2017",
month = "1",
day = "1",
doi = "10.1166/jnn.2017.13910",
language = "English",
volume = "17",
pages = "8925--8934",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "12",

}

TY - JOUR

T1 - Design and fabrication of Si subwavelength structures for broadband antireflection in mid-infrared ranges

AU - Cheon, See Eun

AU - Choi, Jea Young

AU - Lee, Taek Sung

AU - Jeong, Doo Seok

AU - Lee, Kyeong Seok

AU - Lee, Wook Soeng

AU - Kim, Won Mok

AU - Lee, Heon

AU - Kim, Inho

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Broadband antireflection in infrared ranges is essential for various applications such as photovoltaics, light-emitting diodes, and optical lenses for thermal imaging. We performed numerical simulations to find the optimal design of Si subwavelength structures for broadband antireflection in the mid-infrared wavelength ranges from 3 μm to 20 μm. By using the simulation results as a design guide, we fabricated Si subwavelength structures in the form of ellipsoids and paraboloids with self-assembled silica bead monolayers as dry etch masks. The silica bead monolayers on the Si wafers in large area were prepared by colloidal lithography based on spin coating of silica beads dispersed in organic binary solvents. A two-step dry etch process with combination of isotropic and anisotropic etching enables fabrication of the Si subwavelength structures of a high aspect ratio, and we demonstrated broadband antireflection in the mid-infrared wavelength ranges.

AB - Broadband antireflection in infrared ranges is essential for various applications such as photovoltaics, light-emitting diodes, and optical lenses for thermal imaging. We performed numerical simulations to find the optimal design of Si subwavelength structures for broadband antireflection in the mid-infrared wavelength ranges from 3 μm to 20 μm. By using the simulation results as a design guide, we fabricated Si subwavelength structures in the form of ellipsoids and paraboloids with self-assembled silica bead monolayers as dry etch masks. The silica bead monolayers on the Si wafers in large area were prepared by colloidal lithography based on spin coating of silica beads dispersed in organic binary solvents. A two-step dry etch process with combination of isotropic and anisotropic etching enables fabrication of the Si subwavelength structures of a high aspect ratio, and we demonstrated broadband antireflection in the mid-infrared wavelength ranges.

KW - Antireflection

KW - Colloidal lithography

KW - Mid-infrared

KW - Optical design

KW - Silicon subwavelength structure

UR - http://www.scopus.com/inward/record.url?scp=85030165476&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85030165476&partnerID=8YFLogxK

U2 - 10.1166/jnn.2017.13910

DO - 10.1166/jnn.2017.13910

M3 - Article

AN - SCOPUS:85030165476

VL - 17

SP - 8925

EP - 8934

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 12

ER -