Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD

Andreas D. Stricker; Jeffrey B. Johnson; Greg Freeman; Jae Sung Rieh

doi:10.1016/j.apsusc.2003.08.060

Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD

Andreas D. Stricker, Jeffrey B. Johnson, Greg Freeman, Jae Sung Rieh

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A novel simulation assisted investigation was used to obtain the optimum collector design of a 200GHz silicon-germanium (SiGe) hetero junction bipolar transistor (HBT) for manufacturing. Technology computer aided design (TCAD) tools were applied in a stepwise methodology to explore the large and complex design space and to fully understand the tradeoffs between all relevant HBT performance parameters.

Original language	English
Pages (from-to)	324-329
Number of pages	6
Journal	Applied Surface Science
Volume	224
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2003.08.060
Publication status	Published - 2004 Mar 15
Externally published	Yes

Keywords

BJT
Collector doping profile
Design methodology
HBT
Hetero bipolar junction transistor
SiGe
TCAD

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2003.08.060

Cite this

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abstract = "A novel simulation assisted investigation was used to obtain the optimum collector design of a 200GHz silicon-germanium (SiGe) hetero junction bipolar transistor (HBT) for manufacturing. Technology computer aided design (TCAD) tools were applied in a stepwise methodology to explore the large and complex design space and to fully understand the tradeoffs between all relevant HBT performance parameters.",

keywords = "BJT, Collector doping profile, Design methodology, HBT, Hetero bipolar junction transistor, SiGe, TCAD",

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AU - Stricker, Andreas D.

AU - Johnson, Jeffrey B.

AU - Freeman, Greg

AU - Rieh, Jae Sung

PY - 2004/3/15

Y1 - 2004/3/15

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AB - A novel simulation assisted investigation was used to obtain the optimum collector design of a 200GHz silicon-germanium (SiGe) hetero junction bipolar transistor (HBT) for manufacturing. Technology computer aided design (TCAD) tools were applied in a stepwise methodology to explore the large and complex design space and to fully understand the tradeoffs between all relevant HBT performance parameters.

KW - BJT

KW - Collector doping profile

KW - Design methodology

KW - HBT

KW - Hetero bipolar junction transistor

KW - SiGe

KW - TCAD

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ER -

Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD

Abstract

Keywords

ASJC Scopus subject areas

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