Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier

Staffan P.O. Bruce, Anders Rydberg, Moonil Kim, Frank J. Beißwanger, J. F. Luy, Hermann Schumacher, Uwe Erben, Magnus Willander, Magnus Karlsteen

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19 Citations (Scopus)

Abstract

In this paper, the design of an active millimeterwave frequency doubler using an Si/SiGe heterojunction bipolar transistor (HBT) as the active device is studied. Simulations are made using a developed physics-based large-signal model for Si/SiGe HBT's, which includes thermal dependence. Despite the high-output operating frequency of the fabricated doubler being close to fmax 67 GHz for the Si/SiGe HBT, the conversion efficiency in a not completely optimized circuit is found to be better than -12 dB. The 3-dB bandwidth for the doubler is approximately 7.4%. These results are found to be comparable to a heterojunction field-effect transistor (HFET) doubler operating equally close to its fmax. Simulated results of the doubler performance with varied terminating impedances for the HBT are presented as design aids.

Original languageEnglish
Pages (from-to)695-700
Number of pages6
JournalIEEE Transactions on Microwave Theory and Techniques
Volume46
Issue number5 PART 2
DOIs
Publication statusPublished - 1998

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Bruce, S. P. O., Rydberg, A., Kim, M., Beißwanger, F. J., Luy, J. F., Schumacher, H., Erben, U., Willander, M., & Karlsteen, M. (1998). Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier. IEEE Transactions on Microwave Theory and Techniques, 46(5 PART 2), 695-700. https://doi.org/10.1109/22.668684