Design and simulation of a high-density fast amplifier with 180-nm technology

H. Ha; E. Won; Suki Kim; Youngkwon Jo

doi:10.3938/jkps.50.500

Design and simulation of a high-density fast amplifier with 180-nm technology

H. Ha, E. Won, Suki Kim, Youngkwon Jo

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

An application-specific integrated circuit of a preamplifier and shaper has been designed to be used for readout of high-density sensors such as silicon microstrip detectors. The chip is designed with 180-nm technology and is optimized with respect to the shaping time and the reset capability. The detailed simulations show that a gain of 15 mV/fC may be achieved with the design.

Original language	English
Pages (from-to)	500-504
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	2
DOIs	https://doi.org/10.3938/jkps.50.500
Publication status	Published - 2007 Feb

Keywords

ASIC
Amplifier
CMOS

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.3938/jkps.50.500

Cite this

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abstract = "An application-specific integrated circuit of a preamplifier and shaper has been designed to be used for readout of high-density sensors such as silicon microstrip detectors. The chip is designed with 180-nm technology and is optimized with respect to the shaping time and the reset capability. The detailed simulations show that a gain of 15 mV/fC may be achieved with the design.",

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AB - An application-specific integrated circuit of a preamplifier and shaper has been designed to be used for readout of high-density sensors such as silicon microstrip detectors. The chip is designed with 180-nm technology and is optimized with respect to the shaping time and the reset capability. The detailed simulations show that a gain of 15 mV/fC may be achieved with the design.

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KW - CMOS

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Design and simulation of a high-density fast amplifier with 180-nm technology

Abstract

Keywords

ASJC Scopus subject areas

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