Design and simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH quantum dot laser diode

Trevor Chan, Sung Hun Son, Kyoung Chan Kim, Tae Geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)


Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.

Original languageEnglish
Pages (from-to)124-127
Number of pages4
JournalJournal of the Optical Society of Korea
Issue number2
Publication statusPublished - 2011 Jun 1



  • InAlAs/AlGaAs
  • Quantum dot laser
  • Separate confinement hetero structure

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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