Design and simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH quantum dot laser diode

Trevor Chan, Sung Hun Son, Kyoung Chan Kim, Tae Geun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.

Original languageEnglish
Pages (from-to)124-127
Number of pages4
JournalJournal of the Optical Society of Korea
Volume15
Issue number2
DOIs
Publication statusPublished - 2011 Jun 1

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aluminum gallium arsenides
semiconductor lasers
quantum dots
simulation
gradient index optics
laser applications
high power lasers
wetting
light emission
computer programs
thresholds
profiles

Keywords

  • InAlAs/AlGaAs
  • Quantum dot laser
  • Separate confinement hetero structure

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Design and simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH quantum dot laser diode. / Chan, Trevor; Son, Sung Hun; Kim, Kyoung Chan; Kim, Tae Geun.

In: Journal of the Optical Society of Korea, Vol. 15, No. 2, 01.06.2011, p. 124-127.

Research output: Contribution to journalArticle

Chan, Trevor ; Son, Sung Hun ; Kim, Kyoung Chan ; Kim, Tae Geun. / Design and simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH quantum dot laser diode. In: Journal of the Optical Society of Korea. 2011 ; Vol. 15, No. 2. pp. 124-127.
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