@article{d5bd7dd0524846c7997394e6237099b0,
title = "Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor",
abstract = "In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). The hybrid logic and memory operations of the LIM inverter were investigated by mixed-mode technology computer-aided design simulations. Our LIM inverter exhibited a high voltage gain of 296.8 (V/V) when transitioning from logic {\textquoteleft}1{\textquoteright} to {\textquoteleft}0{\textquoteright} and 7.9 (V/V) when transitioning from logic {\textquoteleft}0{\textquoteright} to {\textquoteleft}1{\textquoteright}, while holding calculated logic at zero input voltage. The energy band diagrams of the n-FBFET structure demonstrated that the holding operation of the inverter was implemented by controlling the positive feedback loop. Moreover, the output logic can remain constant without any supply voltage, resulting in zero static power consumption.",
keywords = "Feedback field-effect transistor, Logic-in-memory, Mixed-mode simulation, Positive feedback loop, Silicon nanowire",
author = "Eunwoo Baek and Jaemin Son and Kyoungah Cho and Sangsig Kim",
note = "Funding Information: Funding:ThisresearchwassupportedbyaNationalResearchFoundationof Korea(NRF) grant fundedbythe Koreangovernment(MSIT;2020R1A2C3004538),the BrainKorea21PlusProjectof 2022throughthe NRFfundedbythe Ministryof Science,ICT &Future Planning,andthe Korea Wong, H.S.; Salahuddin, S. Memory leads the way to better computing. Nat. Nanotechnol. 2015, 10, 191–194. [CrossRef] [PubMed] UniversityGrant. Indiveri, G.; Liu, S.C. Memory and Information Processing in Neuromorphic Systems. Proc. IEEE 2015, 103, 1379–1397. [CrossRef] Upadhyay,N.K.;Jiang,CoH.;nflicWatsngo,fZ.R.;InteAsapu,rest:ThS.;e Xia,authQor.Fs.;dYaecngla,rJ.J.e nEmero comgingpetMemoryinginterDevicesest. forNeuromorphic Computing. Adv. Mater. Technol. 2019, 4, 1800589. [CrossRef] Santoro, G.; Turvani, G.; Graziano, M. New Logic-In-Memory Paradigms: An Architectural and Technological Perspective. Micromachines 2019, 10, 368. [CrossRef] [PubMed] Won5.g,JHan.Sg.,;B.SCa.;laNhaumd,dYi.n;,KoSo.,BM.J.e;mChooriy,J.;leImad,sS.Gt.h;eParwk,aSy.H.tKo .;Cbhetotie,rS.Yc.oMmepmurtiisntigv.eLNogati.c-inN-ManeomteochrynoIln.teg2r0a1t5e,dC1i0r,cui1t9s1fo–r194. https://dEneroi.orgy-Efg/10ficient.1038/nFlexiblenano.2Electr015.2onics.9. Adv. Funct. Mater. 2018,28,1704725. [CrossRef] Indiveri, G.; Liu,S.C. MemoryandInformationProcessing inNeuromorphicSystems. Proc. IEEE2015, 103,1379–1397. https://doi.org/10.1109/Jproc.2015.2444094. Upadhyay,N.K.;Jiang,H.;Wang,Z.R.;Asapu,S.;Xia,Q.F.;Yang,J.J.EmergingMemoryDevicesforNeuromorphicComputing. Adv.Mater.Technol.2019,4,1800589.https://doi.org/10.1002/admt.201800589. Santoro,G.;Turvani,G.;Graziano,M.NewLogic-In-MemoryParadigms:AnArchitecturalandTechnologicalPerspective.Mi-cromachines2019,10,368.https://doi.org/10.3390/mi10060368. Funding Information: This research was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT; 2020R1A2C3004538), the Brain Korea 21 Plus Project of 2022 through the NRF funded by the Ministry of Science, ICT & Future Planning, and the Korea University Grant. Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",
year = "2022",
month = apr,
doi = "10.3390/mi13040590",
language = "English",
volume = "13",
journal = "Micromachines",
issn = "2072-666X",
publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",
number = "4",
}