Design of a novel SiC MOSFET structure for EV inverter efficiency improvement

Jong Seok Lee, Dae Hwan Chun, Jeong Hee Park, Young Kyun Jung, Ey Goo Kang, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Inverters for electric vehicle motor drive systems are essential in converting the battery's direct current into alternating current. Si(Silicon) IGBT that is commonly used in inverter modules have large Vce, sat and turn-off time due to p+ drain and tail current. Therefore, inverter modules consist of Si IGBT with relatively low efficiency. If we can use MOSFETs instead of IGBT in inverter modules, it is possible to achieve high efficiency because of short turn-off time and high operating frequency. Yet also has a problem; Si MOSFETs has large on-resistance compared to Si IGBTs. In this study, SiC(Silicon Carbide) was used to make MOSFETs instead of Si. Futhermore, an accumulation channel concept is adapted to a SiC trench MOSFET, namely Trench ACCUFET. Compared with conventional SiC trench MOSFETs, the novel SiC trench ACCUFET structure has not only lower on-resistance but also high breakdown voltage as shown by the simulation results. We fabricated the Trench ACCUFET for verification, and described improvements that is to be made.

Original languageEnglish
Title of host publicationProceedings of the International Symposium on Power Semiconductor Devices and ICs
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages281-284
Number of pages4
ISBN (Print)9781479929177
DOIs
Publication statusPublished - 2014 Jan 1
Event26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 - Waikoloa, HI, United States
Duration: 2014 Jun 152014 Jun 19

Other

Other26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
CountryUnited States
CityWaikoloa, HI
Period14/6/1514/6/19

Fingerprint

Insulated gate bipolar transistors (IGBT)
Silicon carbide
Electric vehicles
Electric breakdown
Silicon

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Lee, J. S., Chun, D. H., Park, J. H., Jung, Y. K., Kang, E. G., & Sung, M. Y. (2014). Design of a novel SiC MOSFET structure for EV inverter efficiency improvement. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (pp. 281-284). [6856031] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2014.6856031

Design of a novel SiC MOSFET structure for EV inverter efficiency improvement. / Lee, Jong Seok; Chun, Dae Hwan; Park, Jeong Hee; Jung, Young Kyun; Kang, Ey Goo; Sung, Man Young.

Proceedings of the International Symposium on Power Semiconductor Devices and ICs. Institute of Electrical and Electronics Engineers Inc., 2014. p. 281-284 6856031.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, JS, Chun, DH, Park, JH, Jung, YK, Kang, EG & Sung, MY 2014, Design of a novel SiC MOSFET structure for EV inverter efficiency improvement. in Proceedings of the International Symposium on Power Semiconductor Devices and ICs., 6856031, Institute of Electrical and Electronics Engineers Inc., pp. 281-284, 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014, Waikoloa, HI, United States, 14/6/15. https://doi.org/10.1109/ISPSD.2014.6856031
Lee JS, Chun DH, Park JH, Jung YK, Kang EG, Sung MY. Design of a novel SiC MOSFET structure for EV inverter efficiency improvement. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs. Institute of Electrical and Electronics Engineers Inc. 2014. p. 281-284. 6856031 https://doi.org/10.1109/ISPSD.2014.6856031
Lee, Jong Seok ; Chun, Dae Hwan ; Park, Jeong Hee ; Jung, Young Kyun ; Kang, Ey Goo ; Sung, Man Young. / Design of a novel SiC MOSFET structure for EV inverter efficiency improvement. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 281-284
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