Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes

Tae Hoon Park, Tae Geun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.

Original languageEnglish
Pages (from-to)841-846
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume120
Issue number3
DOIs
Publication statusPublished - 2015 Jul 19

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Quantum efficiency
Light emitting diodes
Electrons
Polarization
Ultraviolet Rays
aluminum gallium nitride

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemistry(all)

Cite this

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title = "Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes",
abstract = "In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 {\%} higher internal quantum efficiency and 25 {\%} more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.",
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AU - Park, Tae Hoon

AU - Kim, Tae Geun

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N2 - In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.

AB - In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.

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