Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes

Tae Hoon Park, Tae Geun Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.

Original languageEnglish
Pages (from-to)841-846
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume120
Issue number3
DOIs
Publication statusPublished - 2015 Jul 19

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemistry(all)

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