# Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes

Tae Hoon Park, Tae Geun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

### Abstract

In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.

Original language English 841-846 6 Applied Physics A: Materials Science and Processing 120 3 https://doi.org/10.1007/s00339-015-9345-3 Published - 2015 Jul 19

### Fingerprint

Quantum efficiency
Light emitting diodes
Electrons
Polarization
Ultraviolet Rays
aluminum gallium nitride

### ASJC Scopus subject areas

• Materials Science(all)
• Chemistry(all)

### Cite this

In: Applied Physics A: Materials Science and Processing, Vol. 120, No. 3, 19.07.2015, p. 841-846.

Research output: Contribution to journalArticle

title = "Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes",
abstract = "In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 {\%} higher internal quantum efficiency and 25 {\%} more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.",
author = "Park, {Tae Hoon} and Kim, {Tae Geun}",
year = "2015",
month = "7",
day = "19",
doi = "10.1007/s00339-015-9345-3",
language = "English",
volume = "120",
pages = "841--846",
journal = "Applied Physics",
issn = "0340-3793",
publisher = "Springer Heidelberg",
number = "3",

}

TY - JOUR

T1 - Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes

AU - Park, Tae Hoon

AU - Kim, Tae Geun

PY - 2015/7/19

Y1 - 2015/7/19

N2 - In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.

AB - In this paper, we designed and simulated InGaN/AlGaN-based near-ultraviolet light-emitting diode (NUV LED) epi-structures to obtain high internal quantum efficiency and low efficiency droop. When the conventional epi-structure of an $$\hbox {Al}_{0.1}\hbox {Gal}_{0.9}\hbox {N}$$Al0.1Gal0.9N last quantum barrier and an $$\hbox {Al}_{0.21}\hbox {Gal}_{0.79}\hbox {N}$$Al0.21Gal0.79N electron blocking layer (EBL) was replaced with a graded last quantum barrier and multi-step EBLs, the NUV LED showed 35 % higher internal quantum efficiency and 25 % more suppression of efficiency droop than the conventional NUV LED. Furthermore, a detailed study of the grading effect of the EBL revealed that 10-step EBLs increase performance when compared to other structures. These results are attributed to the polarization-induced effect, which reduces the electron leakage and increases the hole injection efficiency.

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UR - http://www.scopus.com/inward/citedby.url?scp=84938983944&partnerID=8YFLogxK

U2 - 10.1007/s00339-015-9345-3

DO - 10.1007/s00339-015-9345-3

M3 - Article

VL - 120

SP - 841

EP - 846

JO - Applied Physics

JF - Applied Physics

SN - 0340-3793

IS - 3

ER -