Design of field limiting ring employing trench structure for high power devices

Jong Seok Lee, Man Young Sung

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Excellent voltage blocking capability and reliability can be obtained by trenching the field-limiting ring site which would be implanted. The trench etch step makes the junction depth deeper so that junction curvature effect and surface breakdown are less happened. The numerical analyses reveal two facts that the trenched field limiting ring has smaller maximum electric field and the electric field peak is deeper from the substrate surface, hence silicon dioxide layer can be protected. Therefore the voltage blocking capability and reliability of the new structure can be improved. The simulated results show that the trenched field limiting ring can have smaller critical electric field and accomplish near 30% increase of breakdown voltage in comparison with the conventional structure.

Original languageEnglish
Pages (from-to)1621-1625
Number of pages5
Journalieice electronics express
Volume6
Issue number23
DOIs
Publication statusPublished - 2009

Keywords

  • Edge termination
  • Field limiting ring
  • Trench

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Design of field limiting ring employing trench structure for high power devices'. Together they form a unique fingerprint.

Cite this