Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry

Hyunsoo Kim, Kyoung Kook Kim, Kwang Ki Choi, Hyungkun Kim, June O. Song, Jaehee Cho, Kwang Hyeon Baik, Cheolsoo Sone, Yongjo Park, Tae Yeon Seong

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Abstract

The authors report on the design and fabrication of high-efficiency GaN-based light emitting diodes (LEDs) with vertical-injection geometry. Based on the analyses of LED test patterns fabricated with various n -electrode dimensions, a design rule for vertical LEDs is proposed. It is found that the suppression of the vertical current under n electrodes and the efficient injection of the spreading current across the n layers are essential to fabricate high-efficiency LEDs. Introduction of the current blocking layer along with well-designed branched n electrodes results in a large enhancement of power efficiency by a factor of 1.9, compared with that of reference LEDs.

Original languageEnglish
Article number023510
JournalApplied Physics Letters
Volume91
Issue number2
DOIs
Publication statusPublished - 2007 Aug 1

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, H., Kim, K. K., Choi, K. K., Kim, H., Song, J. O., Cho, J., Baik, K. H., Sone, C., Park, Y., & Seong, T. Y. (2007). Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry. Applied Physics Letters, 91(2), [023510]. https://doi.org/10.1063/1.2756139