Design of low power CMOS ultra wide band low noise amplifier using noise canceling technique

Jaemin Shim, Taejun Yang, Jichai Jeong

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

This paper presents a design of a low power CMOS ultra-wideband (UWB) low noise amplifier (LNA) using a noise canceling technique with the TSMC 0.18 μm RF CMOS process. The proposed UWB LNA employs a current-reused structure to decrease the total power consumption instead of using a cascade stage. This structure spends the same DC current for operating two transistors simultaneously. The stagger-tuning technique, which was reported to achieve gain flatness in the required frequency, was adopted to have low and high resonance frequency points over the entire bandwidth from 3.1 to 10.6 GHz. The resonance points were set in 3 GHz and 10 GHz to provide enough gain flatness and return loss. In addition, the noise canceling technique was used to cancel the dominant noise source, which is generated by the first transistor. The simulation results show a flat gain (S21>10 dB) with a good input impedance matching less than -10 dB and a minimum noise figure of 2.9 dB over the entire band. The proposed UWB LNA consumed 15.2 mW from a 1.8 V power supply.

Original languageEnglish
Pages (from-to)821-826
Number of pages6
JournalMicroelectronics Journal
Volume44
Issue number9
DOIs
Publication statusPublished - 2013 Sep

Keywords

  • CMOS
  • Current-reused technique
  • Low noise amplifier
  • Noise canceling
  • UWB

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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