Design of low power CMOS ultra wide band low noise amplifier using noise canceling technique

Jaemin Shim, Taejun Yang, Jichai Jeong

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

This paper presents a design of a low power CMOS ultra-wideband (UWB) low noise amplifier (LNA) using a noise canceling technique with the TSMC 0.18 μm RF CMOS process. The proposed UWB LNA employs a current-reused structure to decrease the total power consumption instead of using a cascade stage. This structure spends the same DC current for operating two transistors simultaneously. The stagger-tuning technique, which was reported to achieve gain flatness in the required frequency, was adopted to have low and high resonance frequency points over the entire bandwidth from 3.1 to 10.6 GHz. The resonance points were set in 3 GHz and 10 GHz to provide enough gain flatness and return loss. In addition, the noise canceling technique was used to cancel the dominant noise source, which is generated by the first transistor. The simulation results show a flat gain (S21>10 dB) with a good input impedance matching less than -10 dB and a minimum noise figure of 2.9 dB over the entire band. The proposed UWB LNA consumed 15.2 mW from a 1.8 V power supply.

Original languageEnglish
Pages (from-to)821-826
Number of pages6
JournalMicroelectronics Journal
Volume44
Issue number9
DOIs
Publication statusPublished - 2013 Sep 1

Fingerprint

Broadband amplifiers
Low noise amplifiers
Ultra-wideband (UWB)
low noise
CMOS
amplifiers
broadband
Transistors
flatness
transistors
Noise figure
impedance matching
Electric power utilization
Tuning
power supplies
Bandwidth
cascades
direct current
tuning
bandwidth

Keywords

  • CMOS
  • Current-reused technique
  • Low noise amplifier
  • Noise canceling
  • UWB

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Design of low power CMOS ultra wide band low noise amplifier using noise canceling technique. / Shim, Jaemin; Yang, Taejun; Jeong, Jichai.

In: Microelectronics Journal, Vol. 44, No. 9, 01.09.2013, p. 821-826.

Research output: Contribution to journalArticle

@article{1cd7cfbfbc7848c8875c0a08716b1ae0,
title = "Design of low power CMOS ultra wide band low noise amplifier using noise canceling technique",
abstract = "This paper presents a design of a low power CMOS ultra-wideband (UWB) low noise amplifier (LNA) using a noise canceling technique with the TSMC 0.18 μm RF CMOS process. The proposed UWB LNA employs a current-reused structure to decrease the total power consumption instead of using a cascade stage. This structure spends the same DC current for operating two transistors simultaneously. The stagger-tuning technique, which was reported to achieve gain flatness in the required frequency, was adopted to have low and high resonance frequency points over the entire bandwidth from 3.1 to 10.6 GHz. The resonance points were set in 3 GHz and 10 GHz to provide enough gain flatness and return loss. In addition, the noise canceling technique was used to cancel the dominant noise source, which is generated by the first transistor. The simulation results show a flat gain (S21>10 dB) with a good input impedance matching less than -10 dB and a minimum noise figure of 2.9 dB over the entire band. The proposed UWB LNA consumed 15.2 mW from a 1.8 V power supply.",
keywords = "CMOS, Current-reused technique, Low noise amplifier, Noise canceling, UWB",
author = "Jaemin Shim and Taejun Yang and Jichai Jeong",
year = "2013",
month = "9",
day = "1",
doi = "10.1016/j.mejo.2013.06.001",
language = "English",
volume = "44",
pages = "821--826",
journal = "Microelectronics Journal",
issn = "0959-8324",
publisher = "Elsevier BV",
number = "9",

}

TY - JOUR

T1 - Design of low power CMOS ultra wide band low noise amplifier using noise canceling technique

AU - Shim, Jaemin

AU - Yang, Taejun

AU - Jeong, Jichai

PY - 2013/9/1

Y1 - 2013/9/1

N2 - This paper presents a design of a low power CMOS ultra-wideband (UWB) low noise amplifier (LNA) using a noise canceling technique with the TSMC 0.18 μm RF CMOS process. The proposed UWB LNA employs a current-reused structure to decrease the total power consumption instead of using a cascade stage. This structure spends the same DC current for operating two transistors simultaneously. The stagger-tuning technique, which was reported to achieve gain flatness in the required frequency, was adopted to have low and high resonance frequency points over the entire bandwidth from 3.1 to 10.6 GHz. The resonance points were set in 3 GHz and 10 GHz to provide enough gain flatness and return loss. In addition, the noise canceling technique was used to cancel the dominant noise source, which is generated by the first transistor. The simulation results show a flat gain (S21>10 dB) with a good input impedance matching less than -10 dB and a minimum noise figure of 2.9 dB over the entire band. The proposed UWB LNA consumed 15.2 mW from a 1.8 V power supply.

AB - This paper presents a design of a low power CMOS ultra-wideband (UWB) low noise amplifier (LNA) using a noise canceling technique with the TSMC 0.18 μm RF CMOS process. The proposed UWB LNA employs a current-reused structure to decrease the total power consumption instead of using a cascade stage. This structure spends the same DC current for operating two transistors simultaneously. The stagger-tuning technique, which was reported to achieve gain flatness in the required frequency, was adopted to have low and high resonance frequency points over the entire bandwidth from 3.1 to 10.6 GHz. The resonance points were set in 3 GHz and 10 GHz to provide enough gain flatness and return loss. In addition, the noise canceling technique was used to cancel the dominant noise source, which is generated by the first transistor. The simulation results show a flat gain (S21>10 dB) with a good input impedance matching less than -10 dB and a minimum noise figure of 2.9 dB over the entire band. The proposed UWB LNA consumed 15.2 mW from a 1.8 V power supply.

KW - CMOS

KW - Current-reused technique

KW - Low noise amplifier

KW - Noise canceling

KW - UWB

UR - http://www.scopus.com/inward/record.url?scp=84884500406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884500406&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2013.06.001

DO - 10.1016/j.mejo.2013.06.001

M3 - Article

AN - SCOPUS:84884500406

VL - 44

SP - 821

EP - 826

JO - Microelectronics Journal

JF - Microelectronics Journal

SN - 0959-8324

IS - 9

ER -