Abstract
We designed a near-unity transmittance dielectric/Ag/ITO electrode for high-efficiency GaN-based light-emitting diodes by using the scattering matrix method. The transmittance of an ultrathin metal layer, sandwiched between a dielectric layer and an ITO layer, was investigated as a function of the thickness and the optical constant of each constituent layer. Three different metals (Ag, Au, and Al) were examined as the metal layer. The analytical simulation indicated that the transmittance of a dielectric/metal/ITO multilayer film is maximized with an approximately 10-nm-thick Ag layer. Additionally, the transmittance also tends to increase as the refractive index of the upper dielectric layer increases. By tailoring the thickness of the dielectric layer and the ITO layer, the dielectric/Ag/ITO structure yielded a transmittance of 0.97, which surpasses the maximum transmittance (0.91) of a single ITO film. Furthermore, this extraordinary transmittance was present for other visible wavelengths of light, including violet and green colors. A complex phasor diagram model confirmed that the transmittance of the dielectric/metal/ITO multilayer film is influenced by the interference of reflected partial waves. These numerical findings underpin a rational design principle for metal-based multilayer films that are utilized as transparent electrodes for the development of efficient light-emitting diodes and solar cell devices.
| Original language | English |
|---|---|
| Pages (from-to) | 833-838 |
| Number of pages | 6 |
| Journal | Current Applied Physics |
| Volume | 15 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2015 Mar 7 |
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Keywords
- Interference coatings
- Metal optics
- Thin films
- Transparent conducting electrode
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes. / Lee, Han Kyeol; Na, Jin Young; Moon, Yoon Jong; Seong, Tae Yeon; Kim, Sun Kyung.
In: Current Applied Physics, Vol. 15, No. 7, 07.03.2015, p. 833-838.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes
AU - Lee, Han Kyeol
AU - Na, Jin Young
AU - Moon, Yoon Jong
AU - Seong, Tae Yeon
AU - Kim, Sun Kyung
PY - 2015/3/7
Y1 - 2015/3/7
N2 - We designed a near-unity transmittance dielectric/Ag/ITO electrode for high-efficiency GaN-based light-emitting diodes by using the scattering matrix method. The transmittance of an ultrathin metal layer, sandwiched between a dielectric layer and an ITO layer, was investigated as a function of the thickness and the optical constant of each constituent layer. Three different metals (Ag, Au, and Al) were examined as the metal layer. The analytical simulation indicated that the transmittance of a dielectric/metal/ITO multilayer film is maximized with an approximately 10-nm-thick Ag layer. Additionally, the transmittance also tends to increase as the refractive index of the upper dielectric layer increases. By tailoring the thickness of the dielectric layer and the ITO layer, the dielectric/Ag/ITO structure yielded a transmittance of 0.97, which surpasses the maximum transmittance (0.91) of a single ITO film. Furthermore, this extraordinary transmittance was present for other visible wavelengths of light, including violet and green colors. A complex phasor diagram model confirmed that the transmittance of the dielectric/metal/ITO multilayer film is influenced by the interference of reflected partial waves. These numerical findings underpin a rational design principle for metal-based multilayer films that are utilized as transparent electrodes for the development of efficient light-emitting diodes and solar cell devices.
AB - We designed a near-unity transmittance dielectric/Ag/ITO electrode for high-efficiency GaN-based light-emitting diodes by using the scattering matrix method. The transmittance of an ultrathin metal layer, sandwiched between a dielectric layer and an ITO layer, was investigated as a function of the thickness and the optical constant of each constituent layer. Three different metals (Ag, Au, and Al) were examined as the metal layer. The analytical simulation indicated that the transmittance of a dielectric/metal/ITO multilayer film is maximized with an approximately 10-nm-thick Ag layer. Additionally, the transmittance also tends to increase as the refractive index of the upper dielectric layer increases. By tailoring the thickness of the dielectric layer and the ITO layer, the dielectric/Ag/ITO structure yielded a transmittance of 0.97, which surpasses the maximum transmittance (0.91) of a single ITO film. Furthermore, this extraordinary transmittance was present for other visible wavelengths of light, including violet and green colors. A complex phasor diagram model confirmed that the transmittance of the dielectric/metal/ITO multilayer film is influenced by the interference of reflected partial waves. These numerical findings underpin a rational design principle for metal-based multilayer films that are utilized as transparent electrodes for the development of efficient light-emitting diodes and solar cell devices.
KW - Interference coatings
KW - Metal optics
KW - Thin films
KW - Transparent conducting electrode
UR - http://www.scopus.com/inward/record.url?scp=84954026831&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84954026831&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2015.04.044
DO - 10.1016/j.cap.2015.04.044
M3 - Article
AN - SCOPUS:84954026831
VL - 15
SP - 833
EP - 838
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 7
ER -