Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes

Han Kyeol Lee, Jin Young Na, Yoon Jong Moon, Tae Yeon Seong, Sun Kyung Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We designed a near-unity transmittance dielectric/Ag/ITO electrode for high-efficiency GaN-based light-emitting diodes by using the scattering matrix method. The transmittance of an ultrathin metal layer, sandwiched between a dielectric layer and an ITO layer, was investigated as a function of the thickness and the optical constant of each constituent layer. Three different metals (Ag, Au, and Al) were examined as the metal layer. The analytical simulation indicated that the transmittance of a dielectric/metal/ITO multilayer film is maximized with an approximately 10-nm-thick Ag layer. Additionally, the transmittance also tends to increase as the refractive index of the upper dielectric layer increases. By tailoring the thickness of the dielectric layer and the ITO layer, the dielectric/Ag/ITO structure yielded a transmittance of 0.97, which surpasses the maximum transmittance (0.91) of a single ITO film. Furthermore, this extraordinary transmittance was present for other visible wavelengths of light, including violet and green colors. A complex phasor diagram model confirmed that the transmittance of the dielectric/metal/ITO multilayer film is influenced by the interference of reflected partial waves. These numerical findings underpin a rational design principle for metal-based multilayer films that are utilized as transparent electrodes for the development of efficient light-emitting diodes and solar cell devices.

Original languageEnglish
Pages (from-to)833-838
Number of pages6
JournalCurrent Applied Physics
Volume15
Issue number7
DOIs
Publication statusPublished - 2015 Mar 7

Fingerprint

ITO (semiconductors)
Light emitting diodes
unity
transmittance
light emitting diodes
Metals
Electrodes
electrodes
Multilayer films
metals
Optical constants
Refractive index
Solar cells
S matrix theory
matrix methods
Scattering
Color
Wavelength
solar cells
diagrams

Keywords

  • Interference coatings
  • Metal optics
  • Thin films
  • Transparent conducting electrode

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes. / Lee, Han Kyeol; Na, Jin Young; Moon, Yoon Jong; Seong, Tae Yeon; Kim, Sun Kyung.

In: Current Applied Physics, Vol. 15, No. 7, 07.03.2015, p. 833-838.

Research output: Contribution to journalArticle

Lee, Han Kyeol ; Na, Jin Young ; Moon, Yoon Jong ; Seong, Tae Yeon ; Kim, Sun Kyung. / Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes. In: Current Applied Physics. 2015 ; Vol. 15, No. 7. pp. 833-838.
@article{04d6b030f4684ce6be43dcd15ffb0010,
title = "Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes",
abstract = "We designed a near-unity transmittance dielectric/Ag/ITO electrode for high-efficiency GaN-based light-emitting diodes by using the scattering matrix method. The transmittance of an ultrathin metal layer, sandwiched between a dielectric layer and an ITO layer, was investigated as a function of the thickness and the optical constant of each constituent layer. Three different metals (Ag, Au, and Al) were examined as the metal layer. The analytical simulation indicated that the transmittance of a dielectric/metal/ITO multilayer film is maximized with an approximately 10-nm-thick Ag layer. Additionally, the transmittance also tends to increase as the refractive index of the upper dielectric layer increases. By tailoring the thickness of the dielectric layer and the ITO layer, the dielectric/Ag/ITO structure yielded a transmittance of 0.97, which surpasses the maximum transmittance (0.91) of a single ITO film. Furthermore, this extraordinary transmittance was present for other visible wavelengths of light, including violet and green colors. A complex phasor diagram model confirmed that the transmittance of the dielectric/metal/ITO multilayer film is influenced by the interference of reflected partial waves. These numerical findings underpin a rational design principle for metal-based multilayer films that are utilized as transparent electrodes for the development of efficient light-emitting diodes and solar cell devices.",
keywords = "Interference coatings, Metal optics, Thin films, Transparent conducting electrode",
author = "Lee, {Han Kyeol} and Na, {Jin Young} and Moon, {Yoon Jong} and Seong, {Tae Yeon} and Kim, {Sun Kyung}",
year = "2015",
month = "3",
day = "7",
doi = "10.1016/j.cap.2015.04.044",
language = "English",
volume = "15",
pages = "833--838",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "7",

}

TY - JOUR

T1 - Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes

AU - Lee, Han Kyeol

AU - Na, Jin Young

AU - Moon, Yoon Jong

AU - Seong, Tae Yeon

AU - Kim, Sun Kyung

PY - 2015/3/7

Y1 - 2015/3/7

N2 - We designed a near-unity transmittance dielectric/Ag/ITO electrode for high-efficiency GaN-based light-emitting diodes by using the scattering matrix method. The transmittance of an ultrathin metal layer, sandwiched between a dielectric layer and an ITO layer, was investigated as a function of the thickness and the optical constant of each constituent layer. Three different metals (Ag, Au, and Al) were examined as the metal layer. The analytical simulation indicated that the transmittance of a dielectric/metal/ITO multilayer film is maximized with an approximately 10-nm-thick Ag layer. Additionally, the transmittance also tends to increase as the refractive index of the upper dielectric layer increases. By tailoring the thickness of the dielectric layer and the ITO layer, the dielectric/Ag/ITO structure yielded a transmittance of 0.97, which surpasses the maximum transmittance (0.91) of a single ITO film. Furthermore, this extraordinary transmittance was present for other visible wavelengths of light, including violet and green colors. A complex phasor diagram model confirmed that the transmittance of the dielectric/metal/ITO multilayer film is influenced by the interference of reflected partial waves. These numerical findings underpin a rational design principle for metal-based multilayer films that are utilized as transparent electrodes for the development of efficient light-emitting diodes and solar cell devices.

AB - We designed a near-unity transmittance dielectric/Ag/ITO electrode for high-efficiency GaN-based light-emitting diodes by using the scattering matrix method. The transmittance of an ultrathin metal layer, sandwiched between a dielectric layer and an ITO layer, was investigated as a function of the thickness and the optical constant of each constituent layer. Three different metals (Ag, Au, and Al) were examined as the metal layer. The analytical simulation indicated that the transmittance of a dielectric/metal/ITO multilayer film is maximized with an approximately 10-nm-thick Ag layer. Additionally, the transmittance also tends to increase as the refractive index of the upper dielectric layer increases. By tailoring the thickness of the dielectric layer and the ITO layer, the dielectric/Ag/ITO structure yielded a transmittance of 0.97, which surpasses the maximum transmittance (0.91) of a single ITO film. Furthermore, this extraordinary transmittance was present for other visible wavelengths of light, including violet and green colors. A complex phasor diagram model confirmed that the transmittance of the dielectric/metal/ITO multilayer film is influenced by the interference of reflected partial waves. These numerical findings underpin a rational design principle for metal-based multilayer films that are utilized as transparent electrodes for the development of efficient light-emitting diodes and solar cell devices.

KW - Interference coatings

KW - Metal optics

KW - Thin films

KW - Transparent conducting electrode

UR - http://www.scopus.com/inward/record.url?scp=84954026831&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84954026831&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2015.04.044

DO - 10.1016/j.cap.2015.04.044

M3 - Article

AN - SCOPUS:84954026831

VL - 15

SP - 833

EP - 838

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 7

ER -