Design optimization of the bit and word lines in magnetic random access memory in the Stoner-Wohlfarth model

T. H. Lee, S. H. Lim

Research output: Contribution to journalConference article

Abstract

The optimization in the design of the bit and word lines in magnetic random access memory is performed in the Stoner-Wohlfarth model. This is done by calculating the asteroid curves as a function of the angle between the bit and word lines. The calculation essentially involves finding the energy minima of the system. The switching field is reduced greatly when the angle between the bit and word lines is deviated from the right angles. Thermal stability of half-selected cells, which is estimated by calculating the energy barrier, is also improved significantly.

Original languageEnglish
Pages (from-to)4341-4344
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number12
DOIs
Publication statusPublished - 2007
EventInternational Symposium on Advanced Magnetic Materials and Appilications, (ISAMMA 2007) - Jeju, Korea, Republic of
Duration: 2007 May 282007 Jun 1

ASJC Scopus subject areas

  • Condensed Matter Physics

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