Design principle of super resolution near-field structure using thermally responsive optical phase change materials for nanolithography applications

Gwanwoo Park, Jinhyung Lee, Sunggu Kang, Minsoo Kim, Shinill Kang, Wonjoon Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The super resolution near-field structure (Super-RENS) which is composed of a thin layer of a thermally responsive optical phase change material (PCM) between two dielectric layers, can be a means of resolving the limited resolution of the laser beam for direct laser lithography. In Super-RENS, incident laser irradiation induces the direct, reversible opening and closing of a nanoaperture in the PCM layer, and a nanoscale pattern is realized in the lithography system. Here, we first introduce the complete modeling procedures and optimization methodology for Super-RENS in nanolithography based on a rigorous analysis of near-field structure, thermal analysis in the finite-element method, and analysis of the corresponding feature size on the photoresist (PR) layer. Multiple combinations of the PCM layer and the two dielectric layers with varying dimensions are considered as design parameters to achieve the required resolution in the nanolithography system. The feasible line profiles are investigated at the general operating conditions of the pulsed laser beam, based on varying dimensions of the PCM layer (5-30 nm) and the two dielectric layers (10-200 nm). This work will provide a detailed methodology for the design and optimization of the Super-RENS for applications in the nanolithography system.

Original languageEnglish
Pages (from-to)45-55
Number of pages11
JournalMaterials and Design
Volume102
DOIs
Publication statusPublished - 2016 Jul 15

Fingerprint

Nanolithography
Optical materials
Phase change materials
Lithography
Laser beams
Finite element method
Laser beam effects
Photoresists
Pulsed lasers
Thermoanalysis
Lasers

Keywords

  • Maskless nanolithography
  • Phase change material
  • Photo-thermal simulation
  • Super-resolution near-field structure (Super-RENS)

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Design principle of super resolution near-field structure using thermally responsive optical phase change materials for nanolithography applications. / Park, Gwanwoo; Lee, Jinhyung; Kang, Sunggu; Kim, Minsoo; Kang, Shinill; Choi, Wonjoon.

In: Materials and Design, Vol. 102, 15.07.2016, p. 45-55.

Research output: Contribution to journalArticle

@article{7e66bfd42a2e4de497f0dbcb2fe40b97,
title = "Design principle of super resolution near-field structure using thermally responsive optical phase change materials for nanolithography applications",
abstract = "The super resolution near-field structure (Super-RENS) which is composed of a thin layer of a thermally responsive optical phase change material (PCM) between two dielectric layers, can be a means of resolving the limited resolution of the laser beam for direct laser lithography. In Super-RENS, incident laser irradiation induces the direct, reversible opening and closing of a nanoaperture in the PCM layer, and a nanoscale pattern is realized in the lithography system. Here, we first introduce the complete modeling procedures and optimization methodology for Super-RENS in nanolithography based on a rigorous analysis of near-field structure, thermal analysis in the finite-element method, and analysis of the corresponding feature size on the photoresist (PR) layer. Multiple combinations of the PCM layer and the two dielectric layers with varying dimensions are considered as design parameters to achieve the required resolution in the nanolithography system. The feasible line profiles are investigated at the general operating conditions of the pulsed laser beam, based on varying dimensions of the PCM layer (5-30 nm) and the two dielectric layers (10-200 nm). This work will provide a detailed methodology for the design and optimization of the Super-RENS for applications in the nanolithography system.",
keywords = "Maskless nanolithography, Phase change material, Photo-thermal simulation, Super-resolution near-field structure (Super-RENS)",
author = "Gwanwoo Park and Jinhyung Lee and Sunggu Kang and Minsoo Kim and Shinill Kang and Wonjoon Choi",
year = "2016",
month = "7",
day = "15",
doi = "10.1016/j.matdes.2016.04.026",
language = "English",
volume = "102",
pages = "45--55",
journal = "Materials and Design",
issn = "0261-3069",
publisher = "Elsevier BV",

}

TY - JOUR

T1 - Design principle of super resolution near-field structure using thermally responsive optical phase change materials for nanolithography applications

AU - Park, Gwanwoo

AU - Lee, Jinhyung

AU - Kang, Sunggu

AU - Kim, Minsoo

AU - Kang, Shinill

AU - Choi, Wonjoon

PY - 2016/7/15

Y1 - 2016/7/15

N2 - The super resolution near-field structure (Super-RENS) which is composed of a thin layer of a thermally responsive optical phase change material (PCM) between two dielectric layers, can be a means of resolving the limited resolution of the laser beam for direct laser lithography. In Super-RENS, incident laser irradiation induces the direct, reversible opening and closing of a nanoaperture in the PCM layer, and a nanoscale pattern is realized in the lithography system. Here, we first introduce the complete modeling procedures and optimization methodology for Super-RENS in nanolithography based on a rigorous analysis of near-field structure, thermal analysis in the finite-element method, and analysis of the corresponding feature size on the photoresist (PR) layer. Multiple combinations of the PCM layer and the two dielectric layers with varying dimensions are considered as design parameters to achieve the required resolution in the nanolithography system. The feasible line profiles are investigated at the general operating conditions of the pulsed laser beam, based on varying dimensions of the PCM layer (5-30 nm) and the two dielectric layers (10-200 nm). This work will provide a detailed methodology for the design and optimization of the Super-RENS for applications in the nanolithography system.

AB - The super resolution near-field structure (Super-RENS) which is composed of a thin layer of a thermally responsive optical phase change material (PCM) between two dielectric layers, can be a means of resolving the limited resolution of the laser beam for direct laser lithography. In Super-RENS, incident laser irradiation induces the direct, reversible opening and closing of a nanoaperture in the PCM layer, and a nanoscale pattern is realized in the lithography system. Here, we first introduce the complete modeling procedures and optimization methodology for Super-RENS in nanolithography based on a rigorous analysis of near-field structure, thermal analysis in the finite-element method, and analysis of the corresponding feature size on the photoresist (PR) layer. Multiple combinations of the PCM layer and the two dielectric layers with varying dimensions are considered as design parameters to achieve the required resolution in the nanolithography system. The feasible line profiles are investigated at the general operating conditions of the pulsed laser beam, based on varying dimensions of the PCM layer (5-30 nm) and the two dielectric layers (10-200 nm). This work will provide a detailed methodology for the design and optimization of the Super-RENS for applications in the nanolithography system.

KW - Maskless nanolithography

KW - Phase change material

KW - Photo-thermal simulation

KW - Super-resolution near-field structure (Super-RENS)

UR - http://www.scopus.com/inward/record.url?scp=84963612516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84963612516&partnerID=8YFLogxK

U2 - 10.1016/j.matdes.2016.04.026

DO - 10.1016/j.matdes.2016.04.026

M3 - Article

AN - SCOPUS:84963612516

VL - 102

SP - 45

EP - 55

JO - Materials and Design

JF - Materials and Design

SN - 0261-3069

ER -