Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition

Soong Ju Oh, Nathaniel E. Berry, Ji Hyuk Choi, E. Ashley Gaulding, Hangfei Lin, Taejong Paik, Benjamin T. Diroll, Shin Muramoto, Christopher B. Murray, Cherie R. Kagan

Research output: Contribution to journalArticle

138 Citations (Scopus)

Abstract

We report a simple, solution-based, postsynthetic colloidal, atomic layer deposition (PS-cALD) process to engineer stepwise the surface stoichiometry and therefore the electronic properties of lead chalcogenide nanocrystal (NC) thin films integrated in devices. We found that unlike chalcogen-enriched NC surfaces that are structurally, optically, and electronically unstable, lead chloride treatment creates a well-passivated shell that stabilizes the NCs. Using PS-cALD of lead chalcogenide NC thin films we demonstrate high electron field-effect mobilities of ∼4.5 cm2/(V s).

Original languageEnglish
Pages (from-to)1559-1566
Number of pages8
JournalNano Letters
Volume14
Issue number3
DOIs
Publication statusPublished - 2014 Mar 12
Externally publishedYes

Keywords

  • Lead chalcogenide
  • colloidal atomic layer deposition
  • field-effect transistor
  • nanocrystals
  • solution-process
  • stoichiometry

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Oh, S. J., Berry, N. E., Choi, J. H., Gaulding, E. A., Lin, H., Paik, T., Diroll, B. T., Muramoto, S., Murray, C. B., & Kagan, C. R. (2014). Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition. Nano Letters, 14(3), 1559-1566. https://doi.org/10.1021/nl404818z