Detective quantum efficiency of flat panel CdZnTe X-ray detector

G. L. Khym, K. H. Kim, Y. J. Park, Hyung Jin Yang, S. U. Kim, T. R. Jung

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

High resistivity polycrystalline Cl-doped (100 ppm) Cd 0.96Zn0.04Te thick films have been grown by the thermal evaporation method. The mobility-lifetime product μτ is 5.6 × 10-66 cm2/V for electron and 4.5 × 10-7 cm2/V for hole, and the resistivity is 1.2 × 1010 Ω · cm. Based on the experimental results, we calculated the DQE of a 150 μm thick polycrystalline CdZnTe X-ray detector which has 50 μm (10 lp/mm) spatial resolution by a Monte Carlo method. DQE at 10 lp/mm is 0.14. The resistivity of 1.2 × 1010 Ω · cm restricts the dark current signal in a flat panel 150 μm thick polycrystalline CdZnTe X-ray detector below 12 mR exposure level at 15 V bias.

Original languageEnglish
Pages (from-to)S893-S897
JournalJournal of the Korean Physical Society
Volume45
Issue numberSUPPL.
Publication statusPublished - 2004 Dec

Keywords

  • CdZnTe
  • DQE
  • Detective Quantum Efficiency
  • High resistivity
  • MTF
  • Monte Carlo method
  • Polycrystalline

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Khym, G. L., Kim, K. H., Park, Y. J., Yang, H. J., Kim, S. U., & Jung, T. R. (2004). Detective quantum efficiency of flat panel CdZnTe X-ray detector. Journal of the Korean Physical Society, 45(SUPPL.), S893-S897.