High resistivity polycrystalline Cl-doped (100 ppm) Cd 0.96Zn0.04Te thick films have been grown by the thermal evaporation method. The mobility-lifetime product μτ is 5.6 × 10-66 cm2/V for electron and 4.5 × 10-7 cm2/V for hole, and the resistivity is 1.2 × 1010 Ω · cm. Based on the experimental results, we calculated the DQE of a 150 μm thick polycrystalline CdZnTe X-ray detector which has 50 μm (10 lp/mm) spatial resolution by a Monte Carlo method. DQE at 10 lp/mm is 0.14. The resistivity of 1.2 × 1010 Ω · cm restricts the dark current signal in a flat panel 150 μm thick polycrystalline CdZnTe X-ray detector below 12 mR exposure level at 15 V bias.
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2004 Dec 1|
- Detective Quantum Efficiency
- High resistivity
- Monte Carlo method
ASJC Scopus subject areas
- Physics and Astronomy(all)