Detective quantum efficiency of flat panel CdZnTe X-ray detector

G. L. Khym, Kihyun Kim, Y. J. Park, Hyung Jin Yang, S. U. Kim, T. R. Jung

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

High resistivity polycrystalline Cl-doped (100 ppm) Cd 0.96Zn0.04Te thick films have been grown by the thermal evaporation method. The mobility-lifetime product μτ is 5.6 × 10-66 cm2/V for electron and 4.5 × 10-7 cm2/V for hole, and the resistivity is 1.2 × 1010 Ω · cm. Based on the experimental results, we calculated the DQE of a 150 μm thick polycrystalline CdZnTe X-ray detector which has 50 μm (10 lp/mm) spatial resolution by a Monte Carlo method. DQE at 10 lp/mm is 0.14. The resistivity of 1.2 × 1010 Ω · cm restricts the dark current signal in a flat panel 150 μm thick polycrystalline CdZnTe X-ray detector below 12 mR exposure level at 15 V bias.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume45
Issue numberSUPPL.
Publication statusPublished - 2004 Dec 1

Fingerprint

quantum efficiency
electrical resistivity
detectors
x rays
dark current
thick films
Monte Carlo method
spatial resolution
evaporation
life (durability)
products
electrons

Keywords

  • CdZnTe
  • Detective Quantum Efficiency
  • DQE
  • High resistivity
  • Monte Carlo method
  • MTF
  • Polycrystalline

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Khym, G. L., Kim, K., Park, Y. J., Yang, H. J., Kim, S. U., & Jung, T. R. (2004). Detective quantum efficiency of flat panel CdZnTe X-ray detector. Journal of the Korean Physical Society, 45(SUPPL.).

Detective quantum efficiency of flat panel CdZnTe X-ray detector. / Khym, G. L.; Kim, Kihyun; Park, Y. J.; Yang, Hyung Jin; Kim, S. U.; Jung, T. R.

In: Journal of the Korean Physical Society, Vol. 45, No. SUPPL., 01.12.2004.

Research output: Contribution to journalArticle

Khym, GL, Kim, K, Park, YJ, Yang, HJ, Kim, SU & Jung, TR 2004, 'Detective quantum efficiency of flat panel CdZnTe X-ray detector', Journal of the Korean Physical Society, vol. 45, no. SUPPL..
Khym, G. L. ; Kim, Kihyun ; Park, Y. J. ; Yang, Hyung Jin ; Kim, S. U. ; Jung, T. R. / Detective quantum efficiency of flat panel CdZnTe X-ray detector. In: Journal of the Korean Physical Society. 2004 ; Vol. 45, No. SUPPL.
@article{6f89674471cb48e58a9e92dd550bbe2e,
title = "Detective quantum efficiency of flat panel CdZnTe X-ray detector",
abstract = "High resistivity polycrystalline Cl-doped (100 ppm) Cd 0.96Zn0.04Te thick films have been grown by the thermal evaporation method. The mobility-lifetime product μτ is 5.6 × 10-66 cm2/V for electron and 4.5 × 10-7 cm2/V for hole, and the resistivity is 1.2 × 1010 Ω · cm. Based on the experimental results, we calculated the DQE of a 150 μm thick polycrystalline CdZnTe X-ray detector which has 50 μm (10 lp/mm) spatial resolution by a Monte Carlo method. DQE at 10 lp/mm is 0.14. The resistivity of 1.2 × 1010 Ω · cm restricts the dark current signal in a flat panel 150 μm thick polycrystalline CdZnTe X-ray detector below 12 mR exposure level at 15 V bias.",
keywords = "CdZnTe, Detective Quantum Efficiency, DQE, High resistivity, Monte Carlo method, MTF, Polycrystalline",
author = "Khym, {G. L.} and Kihyun Kim and Park, {Y. J.} and Yang, {Hyung Jin} and Kim, {S. U.} and Jung, {T. R.}",
year = "2004",
month = "12",
day = "1",
language = "English",
volume = "45",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SUPPL.",

}

TY - JOUR

T1 - Detective quantum efficiency of flat panel CdZnTe X-ray detector

AU - Khym, G. L.

AU - Kim, Kihyun

AU - Park, Y. J.

AU - Yang, Hyung Jin

AU - Kim, S. U.

AU - Jung, T. R.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - High resistivity polycrystalline Cl-doped (100 ppm) Cd 0.96Zn0.04Te thick films have been grown by the thermal evaporation method. The mobility-lifetime product μτ is 5.6 × 10-66 cm2/V for electron and 4.5 × 10-7 cm2/V for hole, and the resistivity is 1.2 × 1010 Ω · cm. Based on the experimental results, we calculated the DQE of a 150 μm thick polycrystalline CdZnTe X-ray detector which has 50 μm (10 lp/mm) spatial resolution by a Monte Carlo method. DQE at 10 lp/mm is 0.14. The resistivity of 1.2 × 1010 Ω · cm restricts the dark current signal in a flat panel 150 μm thick polycrystalline CdZnTe X-ray detector below 12 mR exposure level at 15 V bias.

AB - High resistivity polycrystalline Cl-doped (100 ppm) Cd 0.96Zn0.04Te thick films have been grown by the thermal evaporation method. The mobility-lifetime product μτ is 5.6 × 10-66 cm2/V for electron and 4.5 × 10-7 cm2/V for hole, and the resistivity is 1.2 × 1010 Ω · cm. Based on the experimental results, we calculated the DQE of a 150 μm thick polycrystalline CdZnTe X-ray detector which has 50 μm (10 lp/mm) spatial resolution by a Monte Carlo method. DQE at 10 lp/mm is 0.14. The resistivity of 1.2 × 1010 Ω · cm restricts the dark current signal in a flat panel 150 μm thick polycrystalline CdZnTe X-ray detector below 12 mR exposure level at 15 V bias.

KW - CdZnTe

KW - Detective Quantum Efficiency

KW - DQE

KW - High resistivity

KW - Monte Carlo method

KW - MTF

KW - Polycrystalline

UR - http://www.scopus.com/inward/record.url?scp=12744281842&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12744281842&partnerID=8YFLogxK

M3 - Article

VL - 45

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL.

ER -