Detective quantum efficiency of flat panel CdZnTe X-ray detector

G. L. Khym; K. H. Kim; Y. J. Park; Hyung Jin Yang; S. U. Kim; T. R. Jung

Detective quantum efficiency of flat panel CdZnTe X-ray detector

G. L. Khym, K. H. Kim, Y. J. Park, Hyung Jin Yang, S. U. Kim, T. R. Jung

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

High resistivity polycrystalline Cl-doped (100 ppm) Cd _0.96Zn_0.04Te thick films have been grown by the thermal evaporation method. The mobility-lifetime product μτ is 5.6 × 10^-66 cm²/V for electron and 4.5 × 10^-7 cm²/V for hole, and the resistivity is 1.2 × 10¹⁰ Ω · cm. Based on the experimental results, we calculated the DQE of a 150 μm thick polycrystalline CdZnTe X-ray detector which has 50 μm (10 lp/mm) spatial resolution by a Monte Carlo method. DQE at 10 lp/mm is 0.14. The resistivity of 1.2 × 10¹⁰ Ω · cm restricts the dark current signal in a flat panel 150 μm thick polycrystalline CdZnTe X-ray detector below 12 mR exposure level at 15 V bias.

Original language	English
Pages (from-to)	S893-S897
Journal	Journal of the Korean Physical Society
Volume	45
Issue number	SUPPL.
Publication status	Published - 2004 Dec

Keywords

CdZnTe
DQE
Detective Quantum Efficiency
High resistivity
MTF
Monte Carlo method
Polycrystalline

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

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title = "Detective quantum efficiency of flat panel CdZnTe X-ray detector",

abstract = "High resistivity polycrystalline Cl-doped (100 ppm) Cd 0.96Zn0.04Te thick films have been grown by the thermal evaporation method. The mobility-lifetime product μτ is 5.6 × 10-66 cm2/V for electron and 4.5 × 10-7 cm2/V for hole, and the resistivity is 1.2 × 1010 Ω · cm. Based on the experimental results, we calculated the DQE of a 150 μm thick polycrystalline CdZnTe X-ray detector which has 50 μm (10 lp/mm) spatial resolution by a Monte Carlo method. DQE at 10 lp/mm is 0.14. The resistivity of 1.2 × 1010 Ω · cm restricts the dark current signal in a flat panel 150 μm thick polycrystalline CdZnTe X-ray detector below 12 mR exposure level at 15 V bias.",

keywords = "CdZnTe, DQE, Detective Quantum Efficiency, High resistivity, MTF, Monte Carlo method, Polycrystalline",

author = "Khym, {G. L.} and Kim, {K. H.} and Park, {Y. J.} and Yang, {Hyung Jin} and Kim, {S. U.} and Jung, {T. R.}",

year = "2004",

month = dec,

language = "English",

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pages = "S893--S897",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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TY - JOUR

T1 - Detective quantum efficiency of flat panel CdZnTe X-ray detector

AU - Khym, G. L.

AU - Kim, K. H.

AU - Park, Y. J.

AU - Yang, Hyung Jin

AU - Kim, S. U.

AU - Jung, T. R.

PY - 2004/12

Y1 - 2004/12

N2 - High resistivity polycrystalline Cl-doped (100 ppm) Cd 0.96Zn0.04Te thick films have been grown by the thermal evaporation method. The mobility-lifetime product μτ is 5.6 × 10-66 cm2/V for electron and 4.5 × 10-7 cm2/V for hole, and the resistivity is 1.2 × 1010 Ω · cm. Based on the experimental results, we calculated the DQE of a 150 μm thick polycrystalline CdZnTe X-ray detector which has 50 μm (10 lp/mm) spatial resolution by a Monte Carlo method. DQE at 10 lp/mm is 0.14. The resistivity of 1.2 × 1010 Ω · cm restricts the dark current signal in a flat panel 150 μm thick polycrystalline CdZnTe X-ray detector below 12 mR exposure level at 15 V bias.

AB - High resistivity polycrystalline Cl-doped (100 ppm) Cd 0.96Zn0.04Te thick films have been grown by the thermal evaporation method. The mobility-lifetime product μτ is 5.6 × 10-66 cm2/V for electron and 4.5 × 10-7 cm2/V for hole, and the resistivity is 1.2 × 1010 Ω · cm. Based on the experimental results, we calculated the DQE of a 150 μm thick polycrystalline CdZnTe X-ray detector which has 50 μm (10 lp/mm) spatial resolution by a Monte Carlo method. DQE at 10 lp/mm is 0.14. The resistivity of 1.2 × 1010 Ω · cm restricts the dark current signal in a flat panel 150 μm thick polycrystalline CdZnTe X-ray detector below 12 mR exposure level at 15 V bias.

KW - CdZnTe

KW - DQE

KW - Detective Quantum Efficiency

KW - High resistivity

KW - MTF

KW - Monte Carlo method

KW - Polycrystalline

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M3 - Article

AN - SCOPUS:12744281842

SN - 0374-4884

VL - 45

SP - S893-S897

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL.

ER -

Detective quantum efficiency of flat panel CdZnTe X-ray detector

Abstract

Keywords

ASJC Scopus subject areas

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