Detector performance and defect densities in CdZnTe after two-step annealing

Eunhye Kim, Yonghoon Kim, A. E. Bolotnikov, R. B. James, Kihyun Kim

Research output: Contribution to journalArticle

Abstract

Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200–220 °C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.

Original languageEnglish
Pages (from-to)51-54
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume923
DOIs
Publication statusPublished - 2019 Apr 11

Keywords

  • Annealing
  • CdZnTe
  • Dislocation
  • Microscale defects
  • Nanoscale defects
  • Stacking fault

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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