Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor

Sangyeop Lee, Seonghoon Choi, Seul Ki Bac, Kyung Jae Lee, Jihoon Chang, Suho Choi, Phunvira Chongthanaphisut, Sang Hoon Lee, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report a method for accurate determination of the strength of the current-induced spin-orbit (SO) field in ferromagnetic GaMnAs films. The SO-field manifests itself in the form of a hysteresis between planar Hall resistances (PHR) measured with positive and negative currents as an applied magnetic field is rotated in the sample plane at constant field strength. The width of the hysteresis, which is related to the strength of the SO-field, is observed to change significantly for different values of the rotating external field strength. Since the SO field occurring at a given current is an intrinsic property of the crystal, such a field dependence of the hysteresis indicates that the width of the hysteresis measured with a single field strength is insufficient for determining the SO field. However, using a model based on magnetic free energy that includes the effects of magnetic anisotropy and the SO-field as developed in the present paper, we show that the SO field for a given current density can be accurately established by fitting to the experimentally observed dependence of transition angles of PHR measured with different applied field strengths. Using the known dependence of magnetic anisotropy of GaMnAs on temperature, we also show that this method applies reliably as the temperature varies.

Original languageEnglish
Article number252401
JournalApplied Physics Letters
Volume111
Issue number25
DOIs
Publication statusPublished - 2017 Dec 18

Fingerprint

orbits
magnetic fields
field strength
hysteresis
Hall resistance
anisotropy
ferromagnetic films
free energy
current density
temperature
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, S., Choi, S., Bac, S. K., Jae Lee, K., Chang, J., Choi, S., ... Furdyna, J. K. (2017). Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor. Applied Physics Letters, 111(25), [252401]. https://doi.org/10.1063/1.5012532

Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor. / Lee, Sangyeop; Choi, Seonghoon; Bac, Seul Ki; Jae Lee, Kyung; Chang, Jihoon; Choi, Suho; Chongthanaphisut, Phunvira; Lee, Sang Hoon; Liu, Xinyu; Dobrowolska, M.; Furdyna, Jacek K.

In: Applied Physics Letters, Vol. 111, No. 25, 252401, 18.12.2017.

Research output: Contribution to journalArticle

Lee, S, Choi, S, Bac, SK, Jae Lee, K, Chang, J, Choi, S, Chongthanaphisut, P, Lee, SH, Liu, X, Dobrowolska, M & Furdyna, JK 2017, 'Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor', Applied Physics Letters, vol. 111, no. 25, 252401. https://doi.org/10.1063/1.5012532
Lee, Sangyeop ; Choi, Seonghoon ; Bac, Seul Ki ; Jae Lee, Kyung ; Chang, Jihoon ; Choi, Suho ; Chongthanaphisut, Phunvira ; Lee, Sang Hoon ; Liu, Xinyu ; Dobrowolska, M. ; Furdyna, Jacek K. / Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor. In: Applied Physics Letters. 2017 ; Vol. 111, No. 25.
@article{8f6315025e0f498dad78c3ae7bc24120,
title = "Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor",
abstract = "We report a method for accurate determination of the strength of the current-induced spin-orbit (SO) field in ferromagnetic GaMnAs films. The SO-field manifests itself in the form of a hysteresis between planar Hall resistances (PHR) measured with positive and negative currents as an applied magnetic field is rotated in the sample plane at constant field strength. The width of the hysteresis, which is related to the strength of the SO-field, is observed to change significantly for different values of the rotating external field strength. Since the SO field occurring at a given current is an intrinsic property of the crystal, such a field dependence of the hysteresis indicates that the width of the hysteresis measured with a single field strength is insufficient for determining the SO field. However, using a model based on magnetic free energy that includes the effects of magnetic anisotropy and the SO-field as developed in the present paper, we show that the SO field for a given current density can be accurately established by fitting to the experimentally observed dependence of transition angles of PHR measured with different applied field strengths. Using the known dependence of magnetic anisotropy of GaMnAs on temperature, we also show that this method applies reliably as the temperature varies.",
author = "Sangyeop Lee and Seonghoon Choi and Bac, {Seul Ki} and {Jae Lee}, Kyung and Jihoon Chang and Suho Choi and Phunvira Chongthanaphisut and Lee, {Sang Hoon} and Xinyu Liu and M. Dobrowolska and Furdyna, {Jacek K.}",
year = "2017",
month = "12",
day = "18",
doi = "10.1063/1.5012532",
language = "English",
volume = "111",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

TY - JOUR

T1 - Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor

AU - Lee, Sangyeop

AU - Choi, Seonghoon

AU - Bac, Seul Ki

AU - Jae Lee, Kyung

AU - Chang, Jihoon

AU - Choi, Suho

AU - Chongthanaphisut, Phunvira

AU - Lee, Sang Hoon

AU - Liu, Xinyu

AU - Dobrowolska, M.

AU - Furdyna, Jacek K.

PY - 2017/12/18

Y1 - 2017/12/18

N2 - We report a method for accurate determination of the strength of the current-induced spin-orbit (SO) field in ferromagnetic GaMnAs films. The SO-field manifests itself in the form of a hysteresis between planar Hall resistances (PHR) measured with positive and negative currents as an applied magnetic field is rotated in the sample plane at constant field strength. The width of the hysteresis, which is related to the strength of the SO-field, is observed to change significantly for different values of the rotating external field strength. Since the SO field occurring at a given current is an intrinsic property of the crystal, such a field dependence of the hysteresis indicates that the width of the hysteresis measured with a single field strength is insufficient for determining the SO field. However, using a model based on magnetic free energy that includes the effects of magnetic anisotropy and the SO-field as developed in the present paper, we show that the SO field for a given current density can be accurately established by fitting to the experimentally observed dependence of transition angles of PHR measured with different applied field strengths. Using the known dependence of magnetic anisotropy of GaMnAs on temperature, we also show that this method applies reliably as the temperature varies.

AB - We report a method for accurate determination of the strength of the current-induced spin-orbit (SO) field in ferromagnetic GaMnAs films. The SO-field manifests itself in the form of a hysteresis between planar Hall resistances (PHR) measured with positive and negative currents as an applied magnetic field is rotated in the sample plane at constant field strength. The width of the hysteresis, which is related to the strength of the SO-field, is observed to change significantly for different values of the rotating external field strength. Since the SO field occurring at a given current is an intrinsic property of the crystal, such a field dependence of the hysteresis indicates that the width of the hysteresis measured with a single field strength is insufficient for determining the SO field. However, using a model based on magnetic free energy that includes the effects of magnetic anisotropy and the SO-field as developed in the present paper, we show that the SO field for a given current density can be accurately established by fitting to the experimentally observed dependence of transition angles of PHR measured with different applied field strengths. Using the known dependence of magnetic anisotropy of GaMnAs on temperature, we also show that this method applies reliably as the temperature varies.

UR - http://www.scopus.com/inward/record.url?scp=85040068564&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85040068564&partnerID=8YFLogxK

U2 - 10.1063/1.5012532

DO - 10.1063/1.5012532

M3 - Article

AN - SCOPUS:85040068564

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 252401

ER -