Determination of interlayer exchange fields acting on individual (Ga,Mn)As layers in (Ga,Mn)As/GaAs multilayers

Sunjae Chung, Sangyeop Lee, Taehee Yoo, Hakjoon Lee, Sang Hoon Lee, Xinyu Liu, Jacek Furdyna

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Magnetoresistance in antiferromagnetically coupled GaMnAs/GaAs:Be multilayers exhibits a unique step feature caused by sequential flips of magnetization in individual GaMnAs layers. Hysteresis loops corresponding to such magnetization flips in specific layers were measured by adjusting the range of the field scan to where the flip occurs. Using the hysteresis shifts of such partial loops, we were able to obtain the strength of the interlayer exchange coupling exerted on a given GaMnAs layer by the rest of the multilayers. This also allowed us to quantitatively establish the magnitude of the coupling of each GaMnAs layer with its adjacent neighbors.

Original languageEnglish
Article number033001
JournalJapanese Journal of Applied Physics
Volume54
Issue number3
DOIs
Publication statusPublished - 2015 Mar 1

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interlayers
Magnetization
Multilayers
Exchange coupling
Magnetoresistance
Hysteresis loops
Hysteresis
hysteresis
magnetization
adjusting
shift

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Determination of interlayer exchange fields acting on individual (Ga,Mn)As layers in (Ga,Mn)As/GaAs multilayers. / Chung, Sunjae; Lee, Sangyeop; Yoo, Taehee; Lee, Hakjoon; Lee, Sang Hoon; Liu, Xinyu; Furdyna, Jacek.

In: Japanese Journal of Applied Physics, Vol. 54, No. 3, 033001, 01.03.2015.

Research output: Contribution to journalArticle

Chung, Sunjae ; Lee, Sangyeop ; Yoo, Taehee ; Lee, Hakjoon ; Lee, Sang Hoon ; Liu, Xinyu ; Furdyna, Jacek. / Determination of interlayer exchange fields acting on individual (Ga,Mn)As layers in (Ga,Mn)As/GaAs multilayers. In: Japanese Journal of Applied Physics. 2015 ; Vol. 54, No. 3.
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