Determination of interlayer exchange fields acting on individual (Ga,Mn)As layers in (Ga,Mn)As/GaAs multilayers

Sunjae Chung; Sangyeop Lee; Taehee Yoo; Hakjoon Lee; Sang Hoon Lee; Xinyu Liu; Jacek Furdyna

doi:10.7567/JJAP.54.033001

Determination of interlayer exchange fields acting on individual (Ga,Mn)As layers in (Ga,Mn)As/GaAs multilayers

Sunjae Chung, Sangyeop Lee, Taehee Yoo, Hakjoon Lee, Sang Hoon Lee, Xinyu Liu, Jacek Furdyna

Department of Physics

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

Magnetoresistance in antiferromagnetically coupled GaMnAs/GaAs:Be multilayers exhibits a unique step feature caused by sequential flips of magnetization in individual GaMnAs layers. Hysteresis loops corresponding to such magnetization flips in specific layers were measured by adjusting the range of the field scan to where the flip occurs. Using the hysteresis shifts of such partial loops, we were able to obtain the strength of the interlayer exchange coupling exerted on a given GaMnAs layer by the rest of the multilayers. This also allowed us to quantitatively establish the magnitude of the coupling of each GaMnAs layer with its adjacent neighbors.

Original language	English
Article number	033001
Journal	Japanese Journal of Applied Physics
Volume	54
Issue number	3
DOIs	https://doi.org/10.7567/JJAP.54.033001
Publication status	Published - 2015 Mar 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Chung, S., Lee, S., Yoo, T., Lee, H., Lee, S. H., Liu, X., & Furdyna, J. (2015). Determination of interlayer exchange fields acting on individual (Ga,Mn)As layers in (Ga,Mn)As/GaAs multilayers. Japanese Journal of Applied Physics, 54(3), [033001]. https://doi.org/10.7567/JJAP.54.033001

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abstract = "Magnetoresistance in antiferromagnetically coupled GaMnAs/GaAs:Be multilayers exhibits a unique step feature caused by sequential flips of magnetization in individual GaMnAs layers. Hysteresis loops corresponding to such magnetization flips in specific layers were measured by adjusting the range of the field scan to where the flip occurs. Using the hysteresis shifts of such partial loops, we were able to obtain the strength of the interlayer exchange coupling exerted on a given GaMnAs layer by the rest of the multilayers. This also allowed us to quantitatively establish the magnitude of the coupling of each GaMnAs layer with its adjacent neighbors.",

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AU - Liu, Xinyu

AU - Furdyna, Jacek

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AB - Magnetoresistance in antiferromagnetically coupled GaMnAs/GaAs:Be multilayers exhibits a unique step feature caused by sequential flips of magnetization in individual GaMnAs layers. Hysteresis loops corresponding to such magnetization flips in specific layers were measured by adjusting the range of the field scan to where the flip occurs. Using the hysteresis shifts of such partial loops, we were able to obtain the strength of the interlayer exchange coupling exerted on a given GaMnAs layer by the rest of the multilayers. This also allowed us to quantitatively establish the magnitude of the coupling of each GaMnAs layer with its adjacent neighbors.

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