Abstract
Magnetoresistance in antiferromagnetically coupled GaMnAs/GaAs:Be multilayers exhibits a unique step feature caused by sequential flips of magnetization in individual GaMnAs layers. Hysteresis loops corresponding to such magnetization flips in specific layers were measured by adjusting the range of the field scan to where the flip occurs. Using the hysteresis shifts of such partial loops, we were able to obtain the strength of the interlayer exchange coupling exerted on a given GaMnAs layer by the rest of the multilayers. This also allowed us to quantitatively establish the magnitude of the coupling of each GaMnAs layer with its adjacent neighbors.
| Original language | English |
|---|---|
| Article number | 033001 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 54 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2015 Mar 1 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Determination of interlayer exchange fields acting on individual (Ga,Mn)As layers in (Ga,Mn)As/GaAs multilayers. / Chung, Sunjae; Lee, Sangyeop; Yoo, Taehee; Lee, Hakjoon; Lee, Sang Hoon; Liu, Xinyu; Furdyna, Jacek.
In: Japanese Journal of Applied Physics, Vol. 54, No. 3, 033001, 01.03.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Determination of interlayer exchange fields acting on individual (Ga,Mn)As layers in (Ga,Mn)As/GaAs multilayers
AU - Chung, Sunjae
AU - Lee, Sangyeop
AU - Yoo, Taehee
AU - Lee, Hakjoon
AU - Lee, Sang Hoon
AU - Liu, Xinyu
AU - Furdyna, Jacek
PY - 2015/3/1
Y1 - 2015/3/1
N2 - Magnetoresistance in antiferromagnetically coupled GaMnAs/GaAs:Be multilayers exhibits a unique step feature caused by sequential flips of magnetization in individual GaMnAs layers. Hysteresis loops corresponding to such magnetization flips in specific layers were measured by adjusting the range of the field scan to where the flip occurs. Using the hysteresis shifts of such partial loops, we were able to obtain the strength of the interlayer exchange coupling exerted on a given GaMnAs layer by the rest of the multilayers. This also allowed us to quantitatively establish the magnitude of the coupling of each GaMnAs layer with its adjacent neighbors.
AB - Magnetoresistance in antiferromagnetically coupled GaMnAs/GaAs:Be multilayers exhibits a unique step feature caused by sequential flips of magnetization in individual GaMnAs layers. Hysteresis loops corresponding to such magnetization flips in specific layers were measured by adjusting the range of the field scan to where the flip occurs. Using the hysteresis shifts of such partial loops, we were able to obtain the strength of the interlayer exchange coupling exerted on a given GaMnAs layer by the rest of the multilayers. This also allowed us to quantitatively establish the magnitude of the coupling of each GaMnAs layer with its adjacent neighbors.
UR - http://www.scopus.com/inward/record.url?scp=84924280799&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84924280799&partnerID=8YFLogxK
U2 - 10.7567/JJAP.54.033001
DO - 10.7567/JJAP.54.033001
M3 - Article
AN - SCOPUS:84924280799
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3
M1 - 033001
ER -