Determination of localized states in nanocrystalline CdZnTe by using a transient photocurrent analysis

Kihyun Kim, K. N. Oh, S. U. Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Using the thermal evaporation method, we prepared nanocrystalline CdZnTe thick films having crystallite sizes of 30-40 nm. Deposited nano-CdZnTe thick films have a preferred (111) growth direction and a resistivity of 1 × 1010 Ω cm. Using the multiple trapping model, we examined the localized state distributions from the time-of-flight (TOE) transient current. In the case of nano-CdZnTe, a localized state having 1 × 1015 cm-3eV-1 at 0.41 eV above the valence band is present and is attributed to Cd vacancies. Another localized state is present at 0.7 eV above the valence band.

Original languageEnglish
Pages (from-to)471-474
Number of pages4
JournalJournal of the Korean Physical Society
Volume41
Issue number4
Publication statusPublished - 2002 Oct 1

Fingerprint

thick films
photocurrents
valence
trapping
evaporation
electrical resistivity

Keywords

  • CdZnTe
  • Deep level trap laplace transform
  • Density of states
  • X-ray detector

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Determination of localized states in nanocrystalline CdZnTe by using a transient photocurrent analysis. / Kim, Kihyun; Oh, K. N.; Kim, S. U.

In: Journal of the Korean Physical Society, Vol. 41, No. 4, 01.10.2002, p. 471-474.

Research output: Contribution to journalArticle

@article{fd59b36065fd4e598a41b5412610958a,
title = "Determination of localized states in nanocrystalline CdZnTe by using a transient photocurrent analysis",
abstract = "Using the thermal evaporation method, we prepared nanocrystalline CdZnTe thick films having crystallite sizes of 30-40 nm. Deposited nano-CdZnTe thick films have a preferred (111) growth direction and a resistivity of 1 × 1010 Ω cm. Using the multiple trapping model, we examined the localized state distributions from the time-of-flight (TOE) transient current. In the case of nano-CdZnTe, a localized state having 1 × 1015 cm-3eV-1 at 0.41 eV above the valence band is present and is attributed to Cd vacancies. Another localized state is present at 0.7 eV above the valence band.",
keywords = "CdZnTe, Deep level trap laplace transform, Density of states, X-ray detector",
author = "Kihyun Kim and Oh, {K. N.} and Kim, {S. U.}",
year = "2002",
month = "10",
day = "1",
language = "English",
volume = "41",
pages = "471--474",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "4",

}

TY - JOUR

T1 - Determination of localized states in nanocrystalline CdZnTe by using a transient photocurrent analysis

AU - Kim, Kihyun

AU - Oh, K. N.

AU - Kim, S. U.

PY - 2002/10/1

Y1 - 2002/10/1

N2 - Using the thermal evaporation method, we prepared nanocrystalline CdZnTe thick films having crystallite sizes of 30-40 nm. Deposited nano-CdZnTe thick films have a preferred (111) growth direction and a resistivity of 1 × 1010 Ω cm. Using the multiple trapping model, we examined the localized state distributions from the time-of-flight (TOE) transient current. In the case of nano-CdZnTe, a localized state having 1 × 1015 cm-3eV-1 at 0.41 eV above the valence band is present and is attributed to Cd vacancies. Another localized state is present at 0.7 eV above the valence band.

AB - Using the thermal evaporation method, we prepared nanocrystalline CdZnTe thick films having crystallite sizes of 30-40 nm. Deposited nano-CdZnTe thick films have a preferred (111) growth direction and a resistivity of 1 × 1010 Ω cm. Using the multiple trapping model, we examined the localized state distributions from the time-of-flight (TOE) transient current. In the case of nano-CdZnTe, a localized state having 1 × 1015 cm-3eV-1 at 0.41 eV above the valence band is present and is attributed to Cd vacancies. Another localized state is present at 0.7 eV above the valence band.

KW - CdZnTe

KW - Deep level trap laplace transform

KW - Density of states

KW - X-ray detector

UR - http://www.scopus.com/inward/record.url?scp=0035981426&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035981426&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035981426

VL - 41

SP - 471

EP - 474

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 4

ER -