Determination of localized states in nanocrystalline CdZnTe by using a transient photocurrent analysis

K. H. Kim, K. N. Oh, S. U. Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Using the thermal evaporation method, we prepared nanocrystalline CdZnTe thick films having crystallite sizes of 30-40 nm. Deposited nano-CdZnTe thick films have a preferred (111) growth direction and a resistivity of 1 × 1010 Ω cm. Using the multiple trapping model, we examined the localized state distributions from the time-of-flight (TOE) transient current. In the case of nano-CdZnTe, a localized state having 1 × 1015 cm-3eV-1 at 0.41 eV above the valence band is present and is attributed to Cd vacancies. Another localized state is present at 0.7 eV above the valence band.

Original languageEnglish
Pages (from-to)471-474
Number of pages4
JournalJournal of the Korean Physical Society
Volume41
Issue number4
Publication statusPublished - 2002 Oct

Keywords

  • CdZnTe
  • Deep level trap laplace transform
  • Density of states
  • X-ray detector

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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