Development and electrical properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O3 thin film applied to embedded decoupling capacitors

Seung Hwan Lee, Hong Ki Kim, Min Gyu Kang, Chong-Yun Kang, Sung Gap Lee, Young Hie Lee, Jung Rag Yoon

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A formed device embedded-type 0402 sized (Ca0.7Sr 0.3)(Zr0.8Ti0.2)O3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 °C-125 °C, delta C/C = ±30 ppm/°C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 ω and 62.39 μH, respectively. The leakage current density was 0.78 μA/cm2 at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.

Original languageEnglish
Article number6814281
Pages (from-to)777-779
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number7
DOIs
Publication statusPublished - 2014
Externally publishedYes

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Keywords

  • CSZT
  • embedded capacitor
  • FDE

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lee, S. H., Kim, H. K., Kang, M. G., Kang, C-Y., Lee, S. G., Lee, Y. H., & Yoon, J. R. (2014). Development and electrical properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O3 thin film applied to embedded decoupling capacitors. IEEE Electron Device Letters, 35(7), 777-779. [6814281]. https://doi.org/10.1109/LED.2014.2320295