Abstract
Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.
| Original language | English |
|---|---|
| Title of host publication | International Symposium on Photoelectronic Detection and Imaging 2011 |
| Subtitle of host publication | Sensor and Micromachined Optical Device Technologies |
| DOIs | |
| Publication status | Published - 2011 Oct 12 |
| Externally published | Yes |
| Event | International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies - Beijing, China Duration: 2011 May 24 → 2011 May 26 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 8191 |
| ISSN (Print) | 0277-786X |
Conference
| Conference | International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies |
|---|---|
| Country | China |
| City | Beijing |
| Period | 11/5/24 → 11/5/26 |
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Keywords
- CdZnTe
- Crystal defects
- Radiation detectors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
Development of CdZnTe radiation detectors. / Bolotnikov, Aleksey; Camarda, Giuseppe; Hossain, Anwar; Kim, Kihyun; Yang, Ge; Gul, Rubi; Cui, Yonggang; James, Ralph B.
International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies. 2011. 819129 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8191).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Development of CdZnTe radiation detectors
AU - Bolotnikov, Aleksey
AU - Camarda, Giuseppe
AU - Hossain, Anwar
AU - Kim, Kihyun
AU - Yang, Ge
AU - Gul, Rubi
AU - Cui, Yonggang
AU - James, Ralph B.
PY - 2011/10/12
Y1 - 2011/10/12
N2 - Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.
AB - Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.
KW - CdZnTe
KW - Crystal defects
KW - Radiation detectors
UR - http://www.scopus.com/inward/record.url?scp=80053601873&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80053601873&partnerID=8YFLogxK
U2 - 10.1117/12.901077
DO - 10.1117/12.901077
M3 - Conference contribution
AN - SCOPUS:80053601873
SN - 9780819488329
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - International Symposium on Photoelectronic Detection and Imaging 2011
ER -