Development of CdZnTe radiation detectors

Aleksey Bolotnikov, Giuseppe Camarda, Anwar Hossain, Kihyun Kim, Ge Yang, Rubi Gul, Yonggang Cui, Ralph B. James

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

Original languageEnglish
Title of host publicationInternational Symposium on Photoelectronic Detection and Imaging 2011
Subtitle of host publicationSensor and Micromachined Optical Device Technologies
DOIs
Publication statusPublished - 2011 Oct 12
Externally publishedYes
EventInternational Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies - Beijing, China
Duration: 2011 May 242011 May 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8191
ISSN (Print)0277-786X

Conference

ConferenceInternational Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies
CountryChina
CityBeijing
Period11/5/2411/5/26

Fingerprint

CdZnTe
Radiation Detectors
Radiation detectors
radiation detectors
Detector
Detectors
Crystal defects
detectors
Crystal
crystal defects
Deep level transient spectroscopy
Hole mobility
Defects
hole mobility
Electrode
Semiconductor detectors
X rays
Infrared transmission
Electrodes
Wave transmission

Keywords

  • CdZnTe
  • Crystal defects
  • Radiation detectors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Bolotnikov, A., Camarda, G., Hossain, A., Kim, K., Yang, G., Gul, R., ... James, R. B. (2011). Development of CdZnTe radiation detectors. In International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies [819129] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8191). https://doi.org/10.1117/12.901077

Development of CdZnTe radiation detectors. / Bolotnikov, Aleksey; Camarda, Giuseppe; Hossain, Anwar; Kim, Kihyun; Yang, Ge; Gul, Rubi; Cui, Yonggang; James, Ralph B.

International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies. 2011. 819129 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8191).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bolotnikov, A, Camarda, G, Hossain, A, Kim, K, Yang, G, Gul, R, Cui, Y & James, RB 2011, Development of CdZnTe radiation detectors. in International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies., 819129, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8191, International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, Beijing, China, 11/5/24. https://doi.org/10.1117/12.901077
Bolotnikov A, Camarda G, Hossain A, Kim K, Yang G, Gul R et al. Development of CdZnTe radiation detectors. In International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies. 2011. 819129. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.901077
Bolotnikov, Aleksey ; Camarda, Giuseppe ; Hossain, Anwar ; Kim, Kihyun ; Yang, Ge ; Gul, Rubi ; Cui, Yonggang ; James, Ralph B. / Development of CdZnTe radiation detectors. International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies. 2011. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{cb423813bb2443548173c95b909a0eac,
title = "Development of CdZnTe radiation detectors",
abstract = "Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.",
keywords = "CdZnTe, Crystal defects, Radiation detectors",
author = "Aleksey Bolotnikov and Giuseppe Camarda and Anwar Hossain and Kihyun Kim and Ge Yang and Rubi Gul and Yonggang Cui and James, {Ralph B.}",
year = "2011",
month = "10",
day = "12",
doi = "10.1117/12.901077",
language = "English",
isbn = "9780819488329",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "International Symposium on Photoelectronic Detection and Imaging 2011",

}

TY - GEN

T1 - Development of CdZnTe radiation detectors

AU - Bolotnikov, Aleksey

AU - Camarda, Giuseppe

AU - Hossain, Anwar

AU - Kim, Kihyun

AU - Yang, Ge

AU - Gul, Rubi

AU - Cui, Yonggang

AU - James, Ralph B.

PY - 2011/10/12

Y1 - 2011/10/12

N2 - Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

AB - Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

KW - CdZnTe

KW - Crystal defects

KW - Radiation detectors

UR - http://www.scopus.com/inward/record.url?scp=80053601873&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053601873&partnerID=8YFLogxK

U2 - 10.1117/12.901077

DO - 10.1117/12.901077

M3 - Conference contribution

AN - SCOPUS:80053601873

SN - 9780819488329

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - International Symposium on Photoelectronic Detection and Imaging 2011

ER -