Development of CdZnTe radiation detectors

Aleksey Bolotnikov, Giuseppe Camarda, Anwar Hossain, Ki Hyun Kim, Ge Yang, Rubi Gul, Yonggang Cui, Ralph B. James

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


Cadmium Zinc Telluride (CdZnTe or CZT) is a very attractive material for room-temperature semiconductor detectors because of its wide band-gap and high atomic number. Despite these advantages, CZT still presents some material limitations and poor hole mobility. In the past decade most of the efforts developing CZT detectors focused on designing different electrode configurations, mainly to minimize the deleterious effect due to the poor hole mobility. A few different electrode geometries were designed and fabricated, such as pixelated anodes and Frisch-grid detectors developed at Brookhaven National Lab (BNL). However, crystal defects in CZT materials still limit the yield of detector-grade crystals, and, in general, dominate the detector's performance. In the past few years, our group's research extended to characterizing the CZT materials at the micro-scale, and to correlating crystal defects with the detector's performance. We built a set of unique tools for this purpose, including infrared (IR) transmission microscopy, X-ray micro-scale mapping using synchrotron light source, X-ray transmission- and reflection- topography, current deep level transient spectroscopy (I-DLTS), and photoluminescence measurements. Our most recent work on CZT detectors was directed towards detailing various crystal defects, studying the internal electrical field, and delineating the effects of thermal annealing on improving the material properties. In this paper, we report our most recent results.

Original languageEnglish
Title of host publicationInternational Symposium on Photoelectronic Detection and Imaging 2011
Subtitle of host publicationSensor and Micromachined Optical Device Technologies
Publication statusPublished - 2011
Externally publishedYes
EventInternational Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies - Beijing, China
Duration: 2011 May 242011 May 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceInternational Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies


  • CdZnTe
  • Crystal defects
  • Radiation detectors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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