Development of solar-blind photodetectors based on Si-implanted β-Ga₂O₃

β-Ga₂O₃ films grown on Al2O3 by a metalorganic chemical vapor deposition technique were used to fabricate a solar-blind photodetector with a planar photoconductor structure. The crystal structure and quality of the β-Ga₂O₃ films were analyzed using X-ray diffraction and micro-Raman spectroscopy. Si ions were introduced into the β-Ga₂O₃ thin films by ion implantation method and activated by an annealing process to form an Ohmic contact between the Ti/Au electrode and the β-Ga₂O₃ film. The electrical conductivity of the β-Ga₂O₃ films was greatly improved by the implantation and subsequent activation of the Si ions. The photoresponse properties of the photodetectors were investigated by analyzing the current-voltage characteristics and the time-dependent photoresponse curves. The fabricated solar-blind photodetectors exhibited photoresponse to 254 nm wavelength, and blindness to 365 nm light, with a high spectral selectivity.