Device design of single-gated feedback field-effect transistors to achieve latch-up behaviors with high current gains

Sola Woo, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this study, a device design of single-gated feedback field-effect transistors (FBFETs) is proposed to achieve latch-up behaviors with high current gains. The latch-up mechanism is examined by conducting an equivalent circuit analysis, and the band diagram, I–V characteristics, memory window, subthreshold swing, and on/off current ratio are investigated using a commercial device simulator. The proposed FBFETs exhibit memory windows wider than 3.0 V, subthreshold swings less than 0.1 mV/decade, the on/off current ratios of approximately 1010, and on-currents of approximately 10−5 A at room temperature. The superior device characteristics and controllable memory windows open the promising possibility of FBFETs as the next-generation electronic devices.

Original languageEnglish
Pages (from-to)1156-1162
Number of pages7
JournalCurrent Applied Physics
Volume20
Issue number10
DOIs
Publication statusPublished - 2020 Oct

Keywords

  • Design method
  • Feedback field-effect transistors
  • Latch-up mechanism
  • Memory characteristics
  • TCAD simulation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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