Device performance of nonpolar a-plane (11-20) InGaN/GaN Light-emitting diodes on r-plane sapphire substrates

Kwang Hyeon Baik, Jae Hyoun Park, Sung Ho Lee, Hooyoung Song, Sung Min Hwang, Seogwoo Lee, Junggeun Jhin, Jeong Tak, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Nonpolar a-plane (11-20) InGaN/GaN light-emitting diodes were successfully demonstrated on rplane (1-102) sapphire substrates. High-crystalline-quality a-plane (11-20) GaN films with smooth morphologies were obtained by using metalorganic chemical vapor deposition (MOCVD) with a multi-step growth method. No apparent blueshift in the peak emission wavelength was observed over a 150 mA current range from on-wafer measurements, indicating that there is no strong polarizationinduced electric field in the a-plane GaN LEDs. The optical output power and the external quantum efficiency were measured as 1.3 mW and 2.55%, respectively, at a driving current of 20 mA when packaged with resin epoxy molding.

Original languageEnglish
Pages (from-to)1140-1143
Number of pages4
JournalJournal of the Korean Physical Society
Volume56
Issue number4
DOIs
Publication statusPublished - 2010 Apr 15

Keywords

  • A-plane gan
  • Electroluminescence
  • MOCVD
  • Stacking faults

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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