Device scaling and application trends for over 200GHz SiGe HBTs

G. Freeman, Jae-Sung Rieh, B. Jagannathan, Zhijian Yang, F. Guarin, A. Joseph

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

We discuss issues and solutions for scaling of SiGe HBT devices through f<inf>T</inf> = 350GHz. Trends in peak f<inf>T</inf> current density J<inf>CP</inf> and avalanche multiplication M-I are shown for devices with f<inf>T</inf> ranging from 50GHz to 350GHz, and discussed in the context of device operation and reliability. The over 10× current density increase observed across this f<inf>T</inf> range may be managed by reducing emitter width and maintaining a low device thermal resistance. We show that the over 20× avalanche current increase must be accompanied by a reduction in base resistance to maintain sufficiently high instability voltage. We also discuss the degradation from avalanche hot carriers and find this acceptable looking forward. From the circuit point of view, reversal in base current resulting from avalanche must be managed in the model and in the circuit design.

Original languageEnglish
Title of host publication2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages6-9
Number of pages4
ISBN (Print)0780377877, 9780780377875
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event4th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Grainau, Germany
Duration: 2003 Apr 11 → …

Other

Other4th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
CountryGermany
CityGrainau
Period03/4/11 → …

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Keywords

  • Current density
  • Germanium silicon alloys
  • Heterojunction bipolar transistors
  • Hot carriers
  • Maintenance
  • Silicon germanium
  • Thermal degradation
  • Thermal management
  • Thermal resistance
  • Voltage

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Instrumentation

Cite this

Freeman, G., Rieh, J-S., Jagannathan, B., Yang, Z., Guarin, F., & Joseph, A. (2003). Device scaling and application trends for over 200GHz SiGe HBTs. In 2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers (pp. 6-9). [1196655] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.2003.1196655