@inproceedings{b7714b2119174c7ca886ec6eb324a422,
title = "Device scaling and application trends for over 200GHz SiGe HBTs",
abstract = "We discuss issues and solutions for scaling of SiGe HBT devices through fT = 350GHz. Trends in peak fT current density JCP and avalanche multiplication M-I are shown for devices with fT ranging from 50GHz to 350GHz, and discussed in the context of device operation and reliability. The over 10× current density increase observed across this fT range may be managed by reducing emitter width and maintaining a low device thermal resistance. We show that the over 20× avalanche current increase must be accompanied by a reduction in base resistance to maintain sufficiently high instability voltage. We also discuss the degradation from avalanche hot carriers and find this acceptable looking forward. From the circuit point of view, reversal in base current resulting from avalanche must be managed in the model and in the circuit design.",
keywords = "Current density, Germanium silicon alloys, Heterojunction bipolar transistors, Hot carriers, Maintenance, Silicon germanium, Thermal degradation, Thermal management, Thermal resistance, Voltage",
author = "G. Freeman and Rieh, {Jae Sung} and B. Jagannathan and Zhijian Yang and F. Guarin and A. Joseph",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 4th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems ; Conference date: 11-04-2003",
year = "2003",
doi = "10.1109/SMIC.2003.1196655",
language = "English",
series = "2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "6--9",
editor = "Ponchak, {George E.}",
booktitle = "2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",
}