Dielectric properties and schottky barriers in silver tantalate-niobate thin film capacitors

Jung Hyuk Koh, Byung-Moo Moon, Alex Grishin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Submicron thick ferroelectric Ag(Ta,Nb)O3 films have been pulsed laser deposited on the bulk Pt80lr20 polycrystalline substrates. They are ferroelectric at temperatures below 125 K with the remnant polarization of 0.4 C/cm2 @ 77K and paraelectric at higher temperatures with tan@ 100 kHz as low as 0.015. Extensive I-V characterization has been performed in a wide temperature range 77 K to 350 K for vertical Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitive cells, where the metals Me = Pd, Au, Cr, and Al have been used as a top electrode. The electronic transport in thin Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitors follows the Schottky emission mechanism with the barrier height for the Pd, Au, Cr, and Al of 0.85, 0.8, 0.74, and 0.69 eV, respectively.

Original languageEnglish
Title of host publicationIntegrated Ferroelectrics
Pages411-418
Number of pages8
Volume39
Edition1-4
DOIs
Publication statusPublished - 2001
Event13th International Symposium on Integrated Ferroelectrics - Colorado Springs, CO, United States
Duration: 2006 Mar 112006 Mar 14

Other

Other13th International Symposium on Integrated Ferroelectrics
CountryUnited States
CityColorado Springs, CO
Period06/3/1106/3/14

Fingerprint

niobates
Silver
Dielectric properties
dielectric properties
capacitors
silver
Ferroelectric materials
thin films
pulsed lasers
Pulsed lasers
Temperature
temperature
electrodes
Capacitors
polarization
Metals
cells
electronics
metals
Polarization

Keywords

  • Ag(Ta,Nb)O films
  • Barrier height
  • Loss tangent
  • Schottky emission
  • Work function

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Koh, J. H., Moon, B-M., & Grishin, A. (2001). Dielectric properties and schottky barriers in silver tantalate-niobate thin film capacitors. In Integrated Ferroelectrics (1-4 ed., Vol. 39, pp. 411-418) https://doi.org/10.1080/10584580108011965

Dielectric properties and schottky barriers in silver tantalate-niobate thin film capacitors. / Koh, Jung Hyuk; Moon, Byung-Moo; Grishin, Alex.

Integrated Ferroelectrics. Vol. 39 1-4. ed. 2001. p. 411-418.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Koh, JH, Moon, B-M & Grishin, A 2001, Dielectric properties and schottky barriers in silver tantalate-niobate thin film capacitors. in Integrated Ferroelectrics. 1-4 edn, vol. 39, pp. 411-418, 13th International Symposium on Integrated Ferroelectrics, Colorado Springs, CO, United States, 06/3/11. https://doi.org/10.1080/10584580108011965
Koh, Jung Hyuk ; Moon, Byung-Moo ; Grishin, Alex. / Dielectric properties and schottky barriers in silver tantalate-niobate thin film capacitors. Integrated Ferroelectrics. Vol. 39 1-4. ed. 2001. pp. 411-418
@inproceedings{cff617c5b29d4498b8f8de34092e900c,
title = "Dielectric properties and schottky barriers in silver tantalate-niobate thin film capacitors",
abstract = "Submicron thick ferroelectric Ag(Ta,Nb)O3 films have been pulsed laser deposited on the bulk Pt80lr20 polycrystalline substrates. They are ferroelectric at temperatures below 125 K with the remnant polarization of 0.4 C/cm2 @ 77K and paraelectric at higher temperatures with tan@ 100 kHz as low as 0.015. Extensive I-V characterization has been performed in a wide temperature range 77 K to 350 K for vertical Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitive cells, where the metals Me = Pd, Au, Cr, and Al have been used as a top electrode. The electronic transport in thin Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitors follows the Schottky emission mechanism with the barrier height for the Pd, Au, Cr, and Al of 0.85, 0.8, 0.74, and 0.69 eV, respectively.",
keywords = "Ag(Ta,Nb)O films, Barrier height, Loss tangent, Schottky emission, Work function",
author = "Koh, {Jung Hyuk} and Byung-Moo Moon and Alex Grishin",
year = "2001",
doi = "10.1080/10584580108011965",
language = "English",
volume = "39",
pages = "411--418",
booktitle = "Integrated Ferroelectrics",
edition = "1-4",

}

TY - GEN

T1 - Dielectric properties and schottky barriers in silver tantalate-niobate thin film capacitors

AU - Koh, Jung Hyuk

AU - Moon, Byung-Moo

AU - Grishin, Alex

PY - 2001

Y1 - 2001

N2 - Submicron thick ferroelectric Ag(Ta,Nb)O3 films have been pulsed laser deposited on the bulk Pt80lr20 polycrystalline substrates. They are ferroelectric at temperatures below 125 K with the remnant polarization of 0.4 C/cm2 @ 77K and paraelectric at higher temperatures with tan@ 100 kHz as low as 0.015. Extensive I-V characterization has been performed in a wide temperature range 77 K to 350 K for vertical Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitive cells, where the metals Me = Pd, Au, Cr, and Al have been used as a top electrode. The electronic transport in thin Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitors follows the Schottky emission mechanism with the barrier height for the Pd, Au, Cr, and Al of 0.85, 0.8, 0.74, and 0.69 eV, respectively.

AB - Submicron thick ferroelectric Ag(Ta,Nb)O3 films have been pulsed laser deposited on the bulk Pt80lr20 polycrystalline substrates. They are ferroelectric at temperatures below 125 K with the remnant polarization of 0.4 C/cm2 @ 77K and paraelectric at higher temperatures with tan@ 100 kHz as low as 0.015. Extensive I-V characterization has been performed in a wide temperature range 77 K to 350 K for vertical Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitive cells, where the metals Me = Pd, Au, Cr, and Al have been used as a top electrode. The electronic transport in thin Me/Ag(Ta,Nb)O3/Pt80Ir20 capacitors follows the Schottky emission mechanism with the barrier height for the Pd, Au, Cr, and Al of 0.85, 0.8, 0.74, and 0.69 eV, respectively.

KW - Ag(Ta,Nb)O films

KW - Barrier height

KW - Loss tangent

KW - Schottky emission

KW - Work function

UR - http://www.scopus.com/inward/record.url?scp=34547772108&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547772108&partnerID=8YFLogxK

U2 - 10.1080/10584580108011965

DO - 10.1080/10584580108011965

M3 - Conference contribution

VL - 39

SP - 411

EP - 418

BT - Integrated Ferroelectrics

ER -