Dielectric properties of Ln(Mg 1/2 Ti 1/2 )O3 as substrates for high-Tc superconductor thin films

Seo Yong Cho, Chang Hun Kim, Dong-Wan Kim, Kug Sun Hong, Jong Hee Kim

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Abstract

Ln(Mg 1/2 Ti 1/2 )O3 (Ln = Dy, La, Nd, Pr, Sm, Y) compositions have been prepared, and their pertinent properties for use as thin film substrates for YBa2Cu3Ox (YBCO) were measured. X-ray diffraction shows that Ln(Mg 1/2 Ti 1/2 )O3 compositions have noncubic symmetry and the GdFeO3-type structure. Dielectric constant measurements revealed values between 22 and 27, which are larger than those of the LnAlO3 family. Quality factor (= 1/tan δ) of the ceramic specimens measured at room temperature was larger than 3000 at 10 GHz. Among the compounds, La(Mg 1/2 Ti 1/2 )O3 exhibited the highest dielectric constant and the lowest dielectric loss. Chemical reaction was observed between Ln(Mg 1/2 Ti 1/2 )O3 (Ln = Dy, Sm, Y) and YBCO after annealing a 1:1 mixture at 950°C. Considering dielectric and physical properties, La(Mg 1/2 Ti 1/2 )O3 and Sm(Mg 1/2 Ti 1/2 )O3 were determined to be suitable substrates for YBCO thin film used in microwave applications.

Original languageEnglish
Pages (from-to)2484-2487
Number of pages4
JournalJournal of Materials Research
Volume14
Issue number6
Publication statusPublished - 1999 Jun 1
Externally publishedYes

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ASJC Scopus subject areas

  • Materials Science(all)

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