Dielectrophoretic assembly and characterization of individually suspended Ag, GaN, SnO2 and Ga2O3 nanowires

Hee Won Seo, Chang-Soo Han, Sun Oh Hwang, Jeunghee Park

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We report the assembly and characterization of individually suspended Ag, GaN, SnO2, and Ga2O3 nanowires (NWs) using dielectrophoresis. The four kinds of NWs were individually assembled using an experimental approach based on the dielectrophoretic force equation. To freely suspend the individual NWs, we controlled the thickness of the bottom electrode. After depositing a Pt top electrode using a focused ion beam, we investigated the I-V curves of NW devices according to the change in the bottom electrode metal as well as the free suspension height from the insulator. We found that their conductivity for four kinds of NWs was remarkably increased along with the increase in the suspension height, while the gate effect in GaN was reduced.

Original languageEnglish
Article number008
Pages (from-to)3388-3393
Number of pages6
JournalNanotechnology
Volume17
Issue number14
DOIs
Publication statusPublished - 2006 Jul 28
Externally publishedYes

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Nanowires
nanowires
assembly
Electrodes
electrodes
Suspensions
Focused ion beams
Electrophoresis
Metals
ion beams
insulators
Ions
Equipment and Supplies
conductivity
curves
metals

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Dielectrophoretic assembly and characterization of individually suspended Ag, GaN, SnO2 and Ga2O3 nanowires. / Seo, Hee Won; Han, Chang-Soo; Hwang, Sun Oh; Park, Jeunghee.

In: Nanotechnology, Vol. 17, No. 14, 008, 28.07.2006, p. 3388-3393.

Research output: Contribution to journalArticle

Seo, Hee Won ; Han, Chang-Soo ; Hwang, Sun Oh ; Park, Jeunghee. / Dielectrophoretic assembly and characterization of individually suspended Ag, GaN, SnO2 and Ga2O3 nanowires. In: Nanotechnology. 2006 ; Vol. 17, No. 14. pp. 3388-3393.
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