Dielectrophoretic assembly and characterization of individually suspended Ag, GaN, SnO2 and Ga2O3 nanowires

Hee Won Seo; Chang Soo Han; Sun Oh Hwang; Jeunghee Park

doi:10.1088/0957-4484/17/14/008

Dielectrophoretic assembly and characterization of individually suspended Ag, GaN, SnO₂ and Ga₂O₃ nanowires

Hee Won Seo, Chang Soo Han, Sun Oh Hwang, Jeunghee Park

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We report the assembly and characterization of individually suspended Ag, GaN, SnO₂, and Ga₂O₃ nanowires (NWs) using dielectrophoresis. The four kinds of NWs were individually assembled using an experimental approach based on the dielectrophoretic force equation. To freely suspend the individual NWs, we controlled the thickness of the bottom electrode. After depositing a Pt top electrode using a focused ion beam, we investigated the I-V curves of NW devices according to the change in the bottom electrode metal as well as the free suspension height from the insulator. We found that their conductivity for four kinds of NWs was remarkably increased along with the increase in the suspension height, while the gate effect in GaN was reduced.

Original language	English
Article number	008
Pages (from-to)	3388-3393
Number of pages	6
Journal	Nanotechnology
Volume	17
Issue number	14
DOIs	https://doi.org/10.1088/0957-4484/17/14/008
Publication status	Published - 2006 Jul 28
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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AU - Park, Jeunghee

PY - 2006/7/28

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N2 - We report the assembly and characterization of individually suspended Ag, GaN, SnO2, and Ga2O3 nanowires (NWs) using dielectrophoresis. The four kinds of NWs were individually assembled using an experimental approach based on the dielectrophoretic force equation. To freely suspend the individual NWs, we controlled the thickness of the bottom electrode. After depositing a Pt top electrode using a focused ion beam, we investigated the I-V curves of NW devices according to the change in the bottom electrode metal as well as the free suspension height from the insulator. We found that their conductivity for four kinds of NWs was remarkably increased along with the increase in the suspension height, while the gate effect in GaN was reduced.

AB - We report the assembly and characterization of individually suspended Ag, GaN, SnO2, and Ga2O3 nanowires (NWs) using dielectrophoresis. The four kinds of NWs were individually assembled using an experimental approach based on the dielectrophoretic force equation. To freely suspend the individual NWs, we controlled the thickness of the bottom electrode. After depositing a Pt top electrode using a focused ion beam, we investigated the I-V curves of NW devices according to the change in the bottom electrode metal as well as the free suspension height from the insulator. We found that their conductivity for four kinds of NWs was remarkably increased along with the increase in the suspension height, while the gate effect in GaN was reduced.

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Dielectrophoretic assembly and characterization of individually suspended Ag, GaN, SnO₂ and Ga₂O₃ nanowires

Abstract

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