Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes

Kyoung Chan Kim, Il Ki Han, Young Chae Yoo, Jung Il Lee, Tae Geun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the differential gain and the linewidth enhancement factor (α-factor) from a 5-μm-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that a-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages336-337
Number of pages2
Volume1
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Fingerprint

Quantum dot lasers
Linewidth
Semiconductor lasers
Beam quality
Laser modes
Semiconductor quantum dots
Wavelength
gallium arsenide
indium arsenide

Keywords

  • Component
  • Differential gain
  • Laser diodes
  • Linewidth enhancement facotr
  • Quantum dot

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Kim, K. C., Han, I. K., Yoo, Y. C., Lee, J. I., & Kim, T. G. (2006). Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (Vol. 1, pp. 336-337). [4388755] https://doi.org/10.1109/NMDC.2006.4388755

Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes. / Kim, Kyoung Chan; Han, Il Ki; Yoo, Young Chae; Lee, Jung Il; Kim, Tae Geun.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. p. 336-337 4388755.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, KC, Han, IK, Yoo, YC, Lee, JI & Kim, TG 2006, Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. vol. 1, 4388755, pp. 336-337, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388755
Kim KC, Han IK, Yoo YC, Lee JI, Kim TG. Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1. 2006. p. 336-337. 4388755 https://doi.org/10.1109/NMDC.2006.4388755
Kim, Kyoung Chan ; Han, Il Ki ; Yoo, Young Chae ; Lee, Jung Il ; Kim, Tae Geun. / Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. pp. 336-337
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