@inproceedings{7153252ec6d94052a65d0a71fbb3ff0f,
title = "Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes",
abstract = "We investigated the differential gain and the linewidth enhancement factor (α-factor) from a 5-μm-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that a-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.",
keywords = "Component, Differential gain, Laser diodes, Linewidth enhancement facotr, Quantum dot",
author = "Kim, {Kyoung Chan} and Han, {Il Ki} and Yoo, {Young Chae} and Lee, {Jung Il} and Kim, {Tae Geun}",
year = "2006",
doi = "10.1109/NMDC.2006.4388755",
language = "English",
isbn = "1424405408",
series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",
pages = "336--337",
booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",
note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",
}