Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes

Kyoung Chan Kim; Il Ki Han; Young Chae Yoo; Jung Il Lee; Tae Geun Kim

doi:10.1109/NMDC.2006.4388755

Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes

Kyoung Chan Kim, Il Ki Han, Young Chae Yoo, Jung Il Lee, Tae Geun Kim

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated the differential gain and the linewidth enhancement factor (α-factor) from a 5-μm-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that a-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	336-337
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388755
Publication status	Published - 2006 Dec 1
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

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Keywords

Component
Differential gain
Laser diodes
Linewidth enhancement facotr
Quantum dot

ASJC Scopus subject areas

Electrical and Electronic Engineering
Materials Science(all)

Cite this

Kim, K. C., Han, I. K., Yoo, Y. C., Lee, J. I., & Kim, T. G. (2006). Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 336-337). [4388755] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388755

Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes. / Kim, Kyoung Chan; Han, Il Ki; Yoo, Young Chae; Lee, Jung Il; Kim, Tae Geun.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 336-337 4388755 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, KC, Han, IK, Yoo, YC, Lee, JI & Kim, TG 2006, Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388755, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 336-337, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388755

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abstract = "We investigated the differential gain and the linewidth enhancement factor (α-factor) from a 5-μm-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that a-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.",

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Access to Document

10.1109/NMDC.2006.4388755