Abstract
We investigated the differential gain and the linewidth enhancement factor (α-factor) from a 5-μm-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that a-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.
| Original language | English |
|---|---|
| Title of host publication | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
| Pages | 336-337 |
| Number of pages | 2 |
| Volume | 1 |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
| Event | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25 |
Other
| Other | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
|---|---|
| Country | Korea, Republic of |
| City | Gyeongju |
| Period | 06/10/22 → 06/10/25 |
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Keywords
- Component
- Differential gain
- Laser diodes
- Linewidth enhancement facotr
- Quantum dot
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Materials Science(all)
Cite this
Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes. / Kim, Kyoung Chan; Han, Il Ki; Yoo, Young Chae; Lee, Jung Il; Kim, Tae Geun.
2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. p. 336-337 4388755.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes
AU - Kim, Kyoung Chan
AU - Han, Il Ki
AU - Yoo, Young Chae
AU - Lee, Jung Il
AU - Kim, Tae Geun
PY - 2006/12/1
Y1 - 2006/12/1
N2 - We investigated the differential gain and the linewidth enhancement factor (α-factor) from a 5-μm-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that a-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.
AB - We investigated the differential gain and the linewidth enhancement factor (α-factor) from a 5-μm-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that a-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.
KW - Component
KW - Differential gain
KW - Laser diodes
KW - Linewidth enhancement facotr
KW - Quantum dot
UR - http://www.scopus.com/inward/record.url?scp=50249168727&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50249168727&partnerID=8YFLogxK
U2 - 10.1109/NMDC.2006.4388755
DO - 10.1109/NMDC.2006.4388755
M3 - Conference contribution
AN - SCOPUS:50249168727
SN - 1424405408
SN - 9781424405404
VL - 1
SP - 336
EP - 337
BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
ER -