Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes

Kyoung Chan Kim, Il Ki Han, Young Chae Yoo, Jung Il Lee, Tae Geun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the differential gain and the linewidth enhancement factor (α-factor) from a 5-μm-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that a-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages336-337
Number of pages2
DOIs
Publication statusPublished - 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Keywords

  • Component
  • Differential gain
  • Laser diodes
  • Linewidth enhancement facotr
  • Quantum dot

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

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  • Cite this

    Kim, K. C., Han, I. K., Yoo, Y. C., Lee, J. I., & Kim, T. G. (2006). Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 336-337). [4388755] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388755