Abstract
We investigated the differential gain and the linewidth enhancement factor (α-factor) from a 5-μm-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that a-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.
Original language | English |
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Title of host publication | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
Pages | 336-337 |
Number of pages | 2 |
DOIs | |
Publication status | Published - 2006 |
Event | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25 |
Publication series
Name | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
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Volume | 1 |
Other
Other | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
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Country/Territory | Korea, Republic of |
City | Gyeongju |
Period | 06/10/22 → 06/10/25 |
Keywords
- Component
- Differential gain
- Laser diodes
- Linewidth enhancement facotr
- Quantum dot
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Materials Science(all)