Abstract
A series of difluorobenzoxadiazole-based copolymers are synthesized for applications in high-performance organic thin-film transistors. Four π-spacers with distinct electrical properties, bithiophene, difluorobithiophene, 2-thiophene-2′-thiazole, and bithiazole, are inserted between head-to-head linkage containing bithiophene to promote polymer chain packing. Among the series, polymer containing bithiophene exhibits a unipolar p-channel performance with a substantial hole mobility of 2.92 cm2 V−1 s−1, and minor structural modification leads to polymer containing bithiazole showing a remarkable unipolar n-channel performance with an electron mobility of 0.83 cm2 V−1 s−1. Through a simple structural modification, such a drastic charge carrier polarity change without sacrificing mobility is elusive in organic thin-film transistor field. Polymer containing hybrid 2-thiophene-2′-thiazole spacer exhibits ambipolarity with encouraging hole/electron mobility of 0.27/0.35 cm2 V−1 s−1, and polymer containing difluorobithiophene shows an average hole mobility of 0.53 cm2 V−1 s−1. Among the results, p-channel transistors exhibit encouraging device stability. The results demonstrate that difluorobenzoxadiazole is a versatile building block for enabling high-mobility semiconductors with variable charge carrier polarity. X-ray diffraction reveals that all difluorobenzoxadiazole-based polymers have substantial film crystallinity with close π-stacking and varied polymer chain orientation. The structure–property–device performance correlations from this study offer useful insights for materials innovation in organic thin-film transistors.
| Original language | English |
|---|---|
| Article number | 1700100 |
| Journal | Advanced Electronic Materials |
| Volume | 3 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2017 Dec 1 |
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Keywords
- ambipolarity
- difluorobenzoxadiazole-based polymer semiconductor
- electron mobility
- hole mobility
- organic thin-film transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Difluorobenzoxadiazole-Based Polymer Semiconductors for High-Performance Organic Thin-Film Transistors with Tunable Charge Carrier Polarity. / Shi, Shengbin; Wang, Yuxi; Uddin, Mohammad Afsar; Zhou, Xin; Guo, Han; Liao, Qiaogan; Zhu, Xucheng; Cheng, Xing; Woo, Han Young; Guo, Xugang.
In: Advanced Electronic Materials, Vol. 3, No. 12, 1700100, 01.12.2017.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Difluorobenzoxadiazole-Based Polymer Semiconductors for High-Performance Organic Thin-Film Transistors with Tunable Charge Carrier Polarity
AU - Shi, Shengbin
AU - Wang, Yuxi
AU - Uddin, Mohammad Afsar
AU - Zhou, Xin
AU - Guo, Han
AU - Liao, Qiaogan
AU - Zhu, Xucheng
AU - Cheng, Xing
AU - Woo, Han Young
AU - Guo, Xugang
PY - 2017/12/1
Y1 - 2017/12/1
N2 - A series of difluorobenzoxadiazole-based copolymers are synthesized for applications in high-performance organic thin-film transistors. Four π-spacers with distinct electrical properties, bithiophene, difluorobithiophene, 2-thiophene-2′-thiazole, and bithiazole, are inserted between head-to-head linkage containing bithiophene to promote polymer chain packing. Among the series, polymer containing bithiophene exhibits a unipolar p-channel performance with a substantial hole mobility of 2.92 cm2 V−1 s−1, and minor structural modification leads to polymer containing bithiazole showing a remarkable unipolar n-channel performance with an electron mobility of 0.83 cm2 V−1 s−1. Through a simple structural modification, such a drastic charge carrier polarity change without sacrificing mobility is elusive in organic thin-film transistor field. Polymer containing hybrid 2-thiophene-2′-thiazole spacer exhibits ambipolarity with encouraging hole/electron mobility of 0.27/0.35 cm2 V−1 s−1, and polymer containing difluorobithiophene shows an average hole mobility of 0.53 cm2 V−1 s−1. Among the results, p-channel transistors exhibit encouraging device stability. The results demonstrate that difluorobenzoxadiazole is a versatile building block for enabling high-mobility semiconductors with variable charge carrier polarity. X-ray diffraction reveals that all difluorobenzoxadiazole-based polymers have substantial film crystallinity with close π-stacking and varied polymer chain orientation. The structure–property–device performance correlations from this study offer useful insights for materials innovation in organic thin-film transistors.
AB - A series of difluorobenzoxadiazole-based copolymers are synthesized for applications in high-performance organic thin-film transistors. Four π-spacers with distinct electrical properties, bithiophene, difluorobithiophene, 2-thiophene-2′-thiazole, and bithiazole, are inserted between head-to-head linkage containing bithiophene to promote polymer chain packing. Among the series, polymer containing bithiophene exhibits a unipolar p-channel performance with a substantial hole mobility of 2.92 cm2 V−1 s−1, and minor structural modification leads to polymer containing bithiazole showing a remarkable unipolar n-channel performance with an electron mobility of 0.83 cm2 V−1 s−1. Through a simple structural modification, such a drastic charge carrier polarity change without sacrificing mobility is elusive in organic thin-film transistor field. Polymer containing hybrid 2-thiophene-2′-thiazole spacer exhibits ambipolarity with encouraging hole/electron mobility of 0.27/0.35 cm2 V−1 s−1, and polymer containing difluorobithiophene shows an average hole mobility of 0.53 cm2 V−1 s−1. Among the results, p-channel transistors exhibit encouraging device stability. The results demonstrate that difluorobenzoxadiazole is a versatile building block for enabling high-mobility semiconductors with variable charge carrier polarity. X-ray diffraction reveals that all difluorobenzoxadiazole-based polymers have substantial film crystallinity with close π-stacking and varied polymer chain orientation. The structure–property–device performance correlations from this study offer useful insights for materials innovation in organic thin-film transistors.
KW - ambipolarity
KW - difluorobenzoxadiazole-based polymer semiconductor
KW - electron mobility
KW - hole mobility
KW - organic thin-film transistor
UR - http://www.scopus.com/inward/record.url?scp=85033686391&partnerID=8YFLogxK
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U2 - 10.1002/aelm.201700100
DO - 10.1002/aelm.201700100
M3 - Article
AN - SCOPUS:85033686391
VL - 3
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 12
M1 - 1700100
ER -