TY - JOUR
T1 - Digital LDO regulator with analogue-assisted loop using source follower
AU - Kim, E.
AU - Kim, C.
N1 - Funding Information:
Acknowledgment: This work was supported by the IT R&D Program of MOTIE/KEIT through Design technology development of ultra-low voltage operating circuit and IP for smart sensor SoC under Grant 10052716.
PY - 2020/8/6
Y1 - 2020/8/6
N2 - A digital low-dropout regulator (DLDO) with an analogue-assist (AA) loop using a source follower has been proposed to improve the drawbacks of the DLDO. The proposed AA loop, which uses a source follower structure to generate the compensation current without additional passive components, mitigates the voltage droop and accelerates the transient response by complementing a slow digital control loop. Additionally, the boost loop enhances the deceleration of the compensation speed owing to the size of the power transistors. This ultimately results in the improvement of the transient response to the voltage droop side. Also, this can facilitate in reducing the amount of the output capacitance (COUT) closely associated with the output voltage droop (ΔVOUT). The proposed DLDO occupying an area of 0.015 mm2 is designed in a 28-nm CMOS process. The ΔTs of 14 ns with COUT of 10 pF is achieved under the load step of 1.5-30 mA with edge time of 2 ns. The consumed quiescent current is 35 μA, and the figure-of-merit of 0.008 ps is achieved.
AB - A digital low-dropout regulator (DLDO) with an analogue-assist (AA) loop using a source follower has been proposed to improve the drawbacks of the DLDO. The proposed AA loop, which uses a source follower structure to generate the compensation current without additional passive components, mitigates the voltage droop and accelerates the transient response by complementing a slow digital control loop. Additionally, the boost loop enhances the deceleration of the compensation speed owing to the size of the power transistors. This ultimately results in the improvement of the transient response to the voltage droop side. Also, this can facilitate in reducing the amount of the output capacitance (COUT) closely associated with the output voltage droop (ΔVOUT). The proposed DLDO occupying an area of 0.015 mm2 is designed in a 28-nm CMOS process. The ΔTs of 14 ns with COUT of 10 pF is achieved under the load step of 1.5-30 mA with edge time of 2 ns. The consumed quiescent current is 35 μA, and the figure-of-merit of 0.008 ps is achieved.
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U2 - 10.1049/el.2020.0562
DO - 10.1049/el.2020.0562
M3 - Article
AN - SCOPUS:85093943851
VL - 56
SP - 801
EP - 803
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 16
ER -